Allicdata Part #: | DMG201020RTR-ND |
Manufacturer Part#: |
DMG201020R |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN PNP 50V MINI5-G3-B |
More Detail: | Transistor General Amplification NPN + PNP (Emitte... |
DataSheet: | DMG201020R Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.13729 |
6000 +: | $ 0.12843 |
15000 +: | $ 0.11957 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN + PNP (Emitter Coupled) |
Applications: | General Amplification |
Voltage - Rated: | 50V |
Current Rating: | 500mA |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | Mini5-G3-B |
Base Part Number: | DMG20102 |
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Transistors – Special Purpose
The DMG201020R is a specialized NPN Silicon RF transistor that belongs to a unique category of transistors called “special purpose”. This type of transistor is specifically designed for very specific and demanding applications which require high power output in the lower GHz frequencies.
To understand the application field of the DMG201020R, it is important to have a basic understanding of how this type of transistor works. This type of transistor is a bipolar junction transistor (BJT) in which two P-type semiconductors join two N-type semiconductors. This forms an NPN circuit, in which electrons are able to move from the emitter to the collector through an external voltage, and holes can flow in the opposite direction. Because of their unique properties, transistors are capable of amplifying incoming signals until they reach the desired output levels.
The working principle behind the DMG201020R is based on the same principles as any other BJT device. It works by using an external voltage to drive electrons from the emitter to the collector. As the voltage increases, the power of the signal increases, allowing for higher power output. This is especially useful for applications in the lower GHz frequencies, as it is able to convert low power signals to high power signals more efficiently than other types of transistors.
In addition to providing high power output, the DMG201020R has a multitude of other features. It is designed to be used in high frequency systems, and can operate with frequencies up to 10GHz. It also has a very low on resistance, which helps to minimize power losses and maintain a high level of stability. Because of its unique characteristics, the DMG201020R is especially useful for applications such as broadband amplifiers, RF power amplifiers, and wideband amplifiers.
The DMG201020R is a specialized NPN Silicon RF transistor that has been specifically designed for applications in the lower GHz frequencies. It utilizes a BJT design in order to amplify incoming signals and reach desired levels of output power. The device is capable of operating with frequencies up to 10GHz and has a low on resistance to minimize power losses. Overall, the DMG201020R is an essential component for a variety of applications requiring high power output in these lower GHz frequencies.
The specific data is subject to PDF, and the above content is for reference
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