Allicdata Part #: | DMG2302UQ-13DI-ND |
Manufacturer Part#: |
DMG2302UQ-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4.2A SOT23 |
More Detail: | N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount S... |
DataSheet: | DMG2302UQ-13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 594.3pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG2302UQ-13 is a dual N-Channel enhancement mode transistor designed for both high voltage and high current applications. It is designed for use in consumer electronics, automotive, industrial, power and telecommunications applications. The DMG2302UQ-13 uses a trench MOSFET process that is best suited for higher voltage and higher power applications. It features a low Qg and low Rdson with very low gate charge, making it ideal for high frequency and high voltage applications.
The DMG2302UQ-13 can be used in a wide variety of applications, including power management, switched mode power supply (SMPS) systems, and high voltage, high current switching applications. In addition, it can be used in wide bandwidth power amplifiers and regulated power supplies, as well as for switching and linear applications.
The main feature of the DMG2302UQ-13 is its low on-resistance and high switching frequency. This enables the DMG2302UQ-13 to remain in an on-state for longer periods of time, allowing it to handle higher power and voltage levels. This also allows it to switch at a faster rate, making it suitable for applications in which high speed is necessary.
The working principle of DMG2302UQ-13 is based on the semiconductor switching mechanism. When the gate voltage is applied to the transistor, it will conduct current and allow a certain amount of current to pass through it. The higher the gate voltage, the more current will be allowed to flow through the transistor. This is done by changing the level of resistance in the channel.
The working principle of the DMG2302UQ-13 is based on the principle of a depletion-mode MOSFET. When the gate voltage is applied to the DMG2302UQ-13, it draws a certain amount of current and the voltage across the device reduces. This reduces the resistance in the channel and the current passes through it.
The DMG2302UQ-13 is most commonly applied to high voltage, high current switching applications. This is because of its low on-resistance and high switching frequency. In addition, it is well-suited for power management, SMPS systems, and high voltage, high current switching applications.
The DMG2302UQ-13 is a very popular device in the market, and is finding applications in a variety of embedded and other applications, ranging from consumer electronics to automotive and industrial applications. Its fast switching capability, low power loss, and low on-resistance, makes it an ideal choice for a variety of power management applications.
The specific data is subject to PDF, and the above content is for reference
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