Allicdata Part #: | DMG2305UX-13DITR-ND |
Manufacturer Part#: |
DMG2305UX-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 4.2A SOT23 |
More Detail: | P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | DMG2305UX-13 Datasheet/PDF |
Quantity: | 590000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 808pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 4.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG2305UX-13 is a type of N-channel complementary metal-oxide-semiconductor field-effect transistor (CMOS FET) designed to provide high performance in various applications. It is manufactured using advanced silicon technology, and offers low on-resistance and low gate charge. The device features an output current of 13 amperes (A) and a drain-source breakdown voltage of 60 volts (V).
The DMG2305UX-13 is a field-effect transistor (FET) that utilizes a single gate-to-channel region enabling it to manipulate or control the flow of electric current across its channel. FETs are versatile and commonly used in applications ranging from power supplies and amplifiers to voltage regulators and radio frequency transceivers. The DMG2305UX-13 is one type of FET, known as a metal-oxide semiconductor FET (MOSFET). MOSFETs are characterized by their improved performance and low power consumption, making them ideal for low-voltage, high-frequency operations.
The DMG2305UX-13 works by utilizing the electric field created by the gate voltage to modulate or control the conductivity of its channel. When the input voltage is applied, the gate draws electrons from the conducting channel and a so-called depletion zone is created, which creates a resistance to current flow. This creates an insulating barrier between the source and the drain of the FET, allowing it to effectively control the flow of current from the source to the drain. The on-resistance of the DMG2305UX-13 can be adjusted by altering the gate voltage, thus allowing for efficient operation.
The DMG2305UX-13 is typically used in switched-mode power supplies, automation circuits and motor drives, as well as in display power circuits and voltage protection circuits. Its ability to handle high output currents makes it suited to various high-output applications, while its low power consumption makes it ideal for low-voltage, high-frequency operations. This makes the DMG2305UX-13 a highly efficient and versatile solution for a range of circuit design needs.
In conclusion, the DMG2305UX-13 is a type of N-channel MOSFET designed to provide high performance in various applications. Its ability to manipulate or control the flow of current across its channel allows it to be used in power supplies, amplifiers and voltage regulators. Its low power consumption and on-resistance make it suited to high-output applications and low-voltage, high-frequency operations, making it a highly versatile solution for circuit design needs.
The specific data is subject to PDF, and the above content is for reference
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