Allicdata Part #: | DMG2307L-7DITR-ND |
Manufacturer Part#: |
DMG2307L-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 2.5A SOT-23 |
More Detail: | P-Channel 30V 2.5A (Ta) 760mW (Ta) Surface Mount S... |
DataSheet: | DMG2307L-7 Datasheet/PDF |
Quantity: | 54000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 760mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 371.3pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG2307L-7 is an enhancement mode N-channel MOSFET transistor which falls into the category of FETs (Field Effect Transistors). More specifically, it is an N-channel MOSFET which is a type of single-gate transistor. The DMG2307L-7 follows a three terminal structure and the three terminals are the source, the drain, and the gate. The source and the drain are at the two ends of the transistor, the source being the negative end and the drain being the positive end. The gate is at the middle of the source and the drain and think of it as a switch. In the development of the DMG2307L-7 is rather recent as it was introduced in 2018 and it is produced by ON Semiconductor. This transistor is best suited for applications involving switching and has a wide power range up to 30V and a maximum drain current of 30A. It also has a low ‘on’ resistance of 10mohm and excellent switching performance. The working principle behind the DMG2307L-7 is pretty simple and it starts with a small electric current which is applied at the gate of the transistor. This small current creates a voltage which then changes the conductivity of the transistor and allowing electrons to flow freely.The two most common uses of the DMG2307L-7 are amplifying and switching.In amplifying, small electric signals are applied to the transistor and bigger electrical signals are produced in response. This is possible because a small amount of current from the gate converts into large current from the drain. The DMG2307L-7 is ideally suited for this purpose due to its large power range and low resistance. In switching, the DMG2307L-7 can also be used as a switch to switch larger currents. When a current is applied at the gate, it creates a voltage which then allows electrons to flow freely. This creates an on/off switch which is commonly used in many electronic circuits. To sum up, the DMG2307L-7 is an enhancement mode N-channel MOSFET transistor which is suited for applications involving switching and amplifying. It has a wide power range up to 30V and a maximum drain current of 30A. It also has a low ‘on’ resistance of 10mohm and excellent switching performance. The two main uses of this type of transistor are amplifying and switching.
The specific data is subject to PDF, and the above content is for reference
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