DMG264050R Allicdata Electronics
Allicdata Part #:

DMG264050RTR-ND

Manufacturer Part#:

DMG264050R

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN/PNP PREBIAS 0.3W MINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: DMG264050R datasheetDMG264050R Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07215
6000 +: $ 0.06778
15000 +: $ 0.06340
30000 +: $ 0.05830
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: DMG26405
Supplier Device Package: Mini6-G4-B
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

DMG264050R is a high power BJT array, manufactured by ROHM, which is ideal for applications primary in radios and. It is a type of long-life, pre-biased transistor array, with the ability to perform in harsh environments. It is able to operate in high temperature and high voltage conditions and provides input impedance up to 10 Gohm.

Features

DMG264050R features a maximum breakdown voltage of 350 V, with a maximum forward voltage at 500 mA of 11.5 V. It also has a low collector-emitter saturation voltage of 1.0 V and a current gain of 95. These features enable high power BJT array operation in a wide range of current, voltage and temperature conditions, making the device suitable for use across a variety of applications. Additionally, DMG264050R has a low quiescent drain DC current of 15mA per transistor, allowing for a lower start-up power consumption.

Application Fields

DMG264050R can be used across a variety of applications, due to its wide current, voltage and temperature operating range. It is suitable to be used in radios, amplifiers, power supplies and general power switching applications. Additionally, the device allows for commutation in lamp drivers and DC-DC converters, making it a suitable choice for high power switching applications.

Working Principle

N-Channel BJT arrays, such as the DMG264050R, are composed of two transistors, a pnp and an npn transistor, with a common collector connection. The two transistors are connected in a complimentary manner, with the collector of the npn transistor connected to the collector of the pnp transistor. When a current is passed through the base of the npn transistor, it will activate, allowing for current to pass from the collector to the emitter, thus allowing for current flow. It is this principle which allows for the DMG264050R to be used in a wide range of applications.

Conclusion

The DMG264050R is a high power BJT array from ROHM, which can be used across a variety of applications, due to its wide operating range. The device is composed of two transistors, which act in complimentary manner, allowing for current flow to the emitter. This makes the DMG264050R a suitable choice for radios, amplifiers, power supplies and general power switching applications.

The specific data is subject to PDF, and the above content is for reference

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