DMG264H00R Discrete Semiconductor Products |
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Allicdata Part #: | DMG264H00RTR-ND |
Manufacturer Part#: |
DMG264H00R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W MINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | DMG264H00R Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V / 50 @ 100mA, 10V |
Base Part Number: | DMG264H0 |
Supplier Device Package: | Mini6-G4-B |
Package / Case: | SOT-23-6 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA, 1µA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA / 250mV @ 5mA, 100mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms, 4.7 kOhms |
Resistor - Base (R1): | 47 kOhms, 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA, 500mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG264H00R is a transistor array of Bipolar Junction Transistors (BJT), which are pre-biased (active), and offer an array of features and qualities designed for circuit protection applications.
The DMG264H00R is designed for high frequency based protection applications; it features high-speed recovery, high breakdown voltage, excellent ESD protection, low on-resistance and low power consumption. This component is exceptionally suitable for applications in digital systems, such as mobile phones, digital still cameras and personal media players.
When it comes to its electrical properties, the DMG264H00R can be rated with a maximum collector-base voltage (Vceo) of 140V, a maximum DC collector current of 150mA and a maximum DC emitter current of 150mA. It also has a maximum transition frequency of 260MHz and a total power dissipation of 700mW.
The DMG264H00R consists of two NPN bipolar transistors in a single package, which is stacked in order to create a single component with improved performance characteristics. It is different from traditional transistor arrays due to its pre-bias configuration; the transistors are designed to be switched on so that the current is quickly switched on and off and the output is always in the on/off state, rather than the traditional linear (linear) configured transistors which are not pre-biased.
As mentioned, the primary purpose of the DMG264H00R is circuit protection in digital systems. It is designed to protect components from excess current caused by sudden changes in input voltages, such as over-voltage and short circuit. When an input voltage exceeds the protection limits, the DMG264H00R will rapidly switch off, reducing the current flow and protecting the components.
The DMG264H00R also offers an advantage over traditional protection transistors due to its low power consumption. This is achieved by its internal structure; the transistors are pre-biased, meaning they are switched on even when there is no current, reducing their power consumption. Additionally, the device\'s low resistance allows the current to flow more efficiently, resulting in lower power consumption.
Overall, the DMG264H00R is an efficient and reliable transistor array, offering improved performance and protection. With its pre-bias configuration and low power consumption, it is an ideal choice for digital systems which require protection from sudden changes in voltages, such as over-voltage, short circuit and electromagnetic interference.
The specific data is subject to PDF, and the above content is for reference
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