Allicdata Part #: | DMG2305UXQ-13-ND |
Manufacturer Part#: |
DMG2305UXQ-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 4.2A SOT23 |
More Detail: | P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SO... |
DataSheet: | DMG2305UXQ-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 808pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 4.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG2305UXQ-13 transistor is a Standard MOSFET transistor type, which have the advantage of having low on-resistance providing fast switching and low gate charge. This feature can be used in controlling power switch linings, powering motors, LED lighting, and amplifier circuits.
The DMG2305UXQ-13 is a N-Channel enhancement mode power MOSFET transistor, as indicated by its model designation:
- D: Usually represents the Variation;
- M: Usually represents a Module (High Current MOSFET);
- G: Usually represents a SOT-23 package;
- 2305: Represents the Collector-Emitter Voltage;
- U: Representing Low-side MOSFET;
- XQ-13: Representing 25 V at 0.0005 ohm.
The DMG2305UXQ-13 is particularly useful in hybrid vehicles, due to its capability to handle high current loads while being small and compact. It is also useful in other applications such as DC/DC converters and power converters.
The DMG2305UXQ-13 transistor can be used in a variety of applications that require high current or voltage handling, such as actuator systems, high-powered motor controls, power load switching, and DC/DC converters. The device also provides high-speed switching capabilities and has a low on-resistance.
The working principle of the DMG2305UXQ-13 boils down to how transistors operate. A transistor is an active three-terminal semiconductor device that can be used to amplifying, switching, or controlling a signal or power. It is the building block for modern electronics. Transistors are composed of two types of semiconductor material, N-type (narrow bandgap) and P-type (wide bandgap).
The DMG2305UXQ-13 is an N-Channel enhancement mode MOSFET transistor with a high current carrying capacity. It works by forming a channel in the N-type semiconductor material between the gate and the source. When a voltage is applied to the gate, it creates an electric field which attracts electrons to the channel and allows the flow of current between the source and the drain. When the voltage is removed, the electrons are repelled back to the source and the current flow stops.
The DMG2305UXQ-13 can be used in a variety of applications, from high-current motor control to high-power load switching, due to its low on-resistance and high-speed switching capabilities. It is also great for hybrid vehicles and other DC/DC converters due to its small size and high current carrying capacity.
The DMG2305UXQ-13 MOSFET transistor is a great device for all sorts of electronic applications that require high current handling, power switching, and high-speed switching. It has a low on-resistance and high current carrying capacity, making it very useful in a variety of situations.
The specific data is subject to PDF, and the above content is for reference
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