Allicdata Part #: | DMG2302U-7DITR-ND |
Manufacturer Part#: |
DMG2302U-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4.2A SOT23 |
More Detail: | N-Channel 20V 4.2A (Ta) 800mW (Ta) Surface Mount S... |
DataSheet: | DMG2302U-7 Datasheet/PDF |
Quantity: | 18000 |
Vgs(th) (Max) @ Id: | 1V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 594.3pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG2302U-7 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that employs an insulated gate and can be used to control the flow of current in a variety of applications. It is a single-gate device, meaning that there is only one transistor that comprises the entire device. It has an RDS, or reverse-drain-source resistance, of just 2.3 ohms, meaning it has a low power-on resistance, which allows it to switch quickly and with minimal power loss.
The DMG2302U-7 can be used in a variety of applications. It is commonly used in switching power supplies, as it is able to handle large amounts of current when switching and it has a low power loss. It is also used in audio amplifiers, as it can help reduce distortion and noise levels. It is also commonly used in robotics and other actuation applications, allowing precise control of motors and other devices.
The DMG2302U-7 is designed to be used in a variety of operating conditions, including high-temperature environments. The device\'s rugged design ensures that it can stand up to high temperatures and other environmental impacts, such as shock and vibration. The device also has a wide range of input-voltage thresholds that can be adjusted depending on the application, allowing it to work with both low- and high-voltage applications.
The working principle of the DMG2302U-7 is based on the capacitive coupling of a metal-insulated gate with an insulated-gate field effect. When voltage is applied to the gate, it creates an electric field that allows it to control the flow of current through the channel between the drain and source. This allows the MOSFET to be used as an on-off switch: by varying the gate voltage, the amount of current being allowed through can be adjusted.
The DMG2302U-7 is an ideal choice for a variety of applications, as it is capable of handling large amounts of current, has a low power-on resistance, and is able to operate in a range of temperature extremes. It is also capable of precise control with its adjustable input-voltage thresholds, allowing it to be used in precise control applications such as robotics or actuation.
The specific data is subject to PDF, and the above content is for reference
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