Allicdata Part #: | DMG6301UDW-13-ND |
Manufacturer Part#: |
DMG6301UDW-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 25V 0.24A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 240mA 300mW Su... |
DataSheet: | DMG6301UDW-13 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 240mA |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.36nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 27.9pF @ 10V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Description
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The DMG6301UDW-13 is an integrated (MosFet) transistor array designed for use in driven applications. It is often used in automotive, industrial, and consumer applications.In driven applications, these transistors are used as power switches, for protection purposes, and for general purpose switching. Voltage levels can be as low as 0.7 Volts and as high as 62 Volts. This array includes thirteen high-temperature, rugged and low-power MOS transistors. The DMG6301UDW-13 has two power characteristics. First, the static power (also known as static dissipation) is the amount of power it draws while it is turned on. This is a very low amount, usually around 0.15W. Second, the dynamic power (aka dynamic dissipation) is the amount of power dissipated when the transistor is in an active switching state. This is usually higher, usually ranging from 25W to 40W.The DMG6301UDW-13 is designed to be compatible with several different types of applications, including: Motor control systems, Fuel injection systems, Power supply controls, Lighting controls, and Security systems. It is also used for general purpose switching in cell phones and other low-voltage information appliances.The working principle of the DMG6301UDW-13 is based on the use of a MOSFET, or metal-oxide-semiconductor field-effect transistor. MOSFETs are commonly used in electronic circuits because they have a low gate-source threshold voltage, low drain-source resistance, and can handle high power without becoming too hot. In this particular transistor array, the MOSFETs are connected together in row, with each row corresponding to a different transistor in the array. Each transistor consists of a gate, drain, and source. The gate is connected to a digital logic chip or processor. By changing the voltage applied to the gate, the current flowing between the drain and source will change accordingly. This allows the MOSFETs in the transistor array to switch their respective outputs on and off, and thus control different levels of current and voltage throughout the system. This type of transistor array is ideal for applications where a high amount of current needs to be switched on and off quickly, such as in motor control, lighting control, and secure systems.In summary, the DMG6301UDW-13 is an integrated (MosFet) transistor array designed for use in a variety of automotive, industrial, and consumer applications. It has two power characteristics- static and dynamic- and is capable of handling a wide range of voltages. The working principle of this array is based on the use of MOSFETs, which are connected in row and controlled by an application-specific digital logic chip. By changing the voltage applied to the gate of the MOSFETs, the current flowing between the drain and source can be quickly switched on and off, making them ideal for applications requiring rapid switching of current and voltage levels.
The specific data is subject to PDF, and the above content is for reference
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