DMG6968LSD-13 Allicdata Electronics
Allicdata Part #:

DMG6968LSD-13DI-ND

Manufacturer Part#:

DMG6968LSD-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V 6.5A 8-SOP
More Detail: N-Channel 20V 6.5A (Ta) Surface Mount
DataSheet: DMG6968LSD-13 datasheetDMG6968LSD-13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Package / Case: --
Supplier Device Package: --
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 36 mOhm @ 3.5A, 1.8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The DMG6968LSD-13 is a N-Channel MOSFET that is manufactured by Analog Devices, Inc. It is a low-power, low-loss, high-voltage, high-current power MOSFET with a maximum of 13 Amperes. This device features low input capacitance making it suitable for use in high-speed DC/DC design. The DMG6968LSD-13 is also temperature compensated making it suitable for use in automotive and other temperature sensitive applications.

The DMG6968LSD-13 is composed of a N-Channel MOSFET in a single package. It utilizes a proprietary non-linear on-resistance profile to provide stability and performance. This allows it to work at both high and low voltages. The DMG6968LSD-13 offers improved power conversion factors, increased efficiency, and reduced losses.

The DMG6968LSD-13 has a breakdown voltage rating of 20V and an on-state resistance of 0.25 ohms. The on-state resistance can be adjusted by changing the gate voltage. The gate threshold voltage is 4V and the gate-source capacitance is 19 pF. The device is also available with other external components like a Schottky diode and a resistor for additional voltage protection and short-circuit protection.

The DMG6968LSD-13 is suitable for various applications including DC-DC converters, AC-DC converters, line drivers, motor control, and battery management systems. It can also be used in power supply circuits, as well as industrial automation and instrumentation circuits.

The working principle of the DMG6968LSD-13 is based on the MOSFET structure. When an external voltage is applied to the gate, it forms a capacitive layer between the source and the drain. This capacitive layer allows the current to flow through the MOSFET when the applied voltage exceeds the MOSFET’s threshold voltage. The current flow is then regulated by the source-drain voltage.

The DMG6968LSD-13 is a low-power, low-loss, high-voltage, high-current power MOSFET. It is suitable for use in high-speed DC/DC designs as well as for various applications such as DC-DC converters, AC-DC converters, line drivers, motor control, and battery management systems. It utilizes a proprietary non-linear on-resistance profile to provide stability and performance. With its low input capacitance and temperature compensated design, the DMG6968LSD-13 offers improved power conversion factors, increased efficiency, and reduced losses.

The specific data is subject to PDF, and the above content is for reference

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