Allicdata Part #: | DMG6602SVTQ-7DITR-ND |
Manufacturer Part#: |
DMG6602SVTQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V TSOT26 |
More Detail: | Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW ... |
DataSheet: | DMG6602SVTQ-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A, 2.8A |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 15V |
Power - Max: | 840mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
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DMG6602SVTQ-7 is one category of transistors, known as Field Effect Transistors, or FETs. FETs are a type of semiconductor device that controls electrical current through the use of an electric field. Within the FET category, DMG6602SVTQ-7 is categorized as MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This particular type of FET is designed for use in standard logic circuits and analogous applications. Specifically, it is an integrated circuit (IC) consisting of two or more MOSFETs that are connected together in an array.
The DMG6602SVTQ-7 operates on a source-gate-drain principle and has a wide variety of applications within the electronics industry. In general, the device is used to amplify electrical signals that occur between different points in a circuit. It does so by allowing a predetermined amount of current to pass through, which is determined by the input signal it receives. The DMG6602SVTQ-7 is typically used in situations where high levels of power, high switching speeds, and excellent on-off control are needed.
It is also capable of working with dual polarity power supplies, meaning it can work with both positive and negative voltage inputs. This feature, along with its low on-resistance and low input capacitance, make it well suited for high-speed digital logic applications such as precision timing and high-speed switching circuits. It is also often used in audio amplifiers, voltage regulators, and power supply circuits.
The DMG6602SVTQ-7 is able to switch significant voltage and current levels at ultra-high frequencies, making it ideal for a range of switching applications. Its superior on-resistance—the ratio of on-state resistance to off-state resistance—makes it one of the best performing MOSFET transistors on the market today. The chip also features an integrated thermal protection that prevents the device from being damaged due to excessive temperature.
The DMG6602SVTQ-7 is also highly reliable and efficient, making it a top choice for high-reliability electronic systems. It has a maximum power dissipation of up to 4 watts and a typical operating voltage of +/- 4.5V. It operates with a maximum gate voltage of 8V, and its maximum junction temperature of 125 degrees Celsius means it can operate in extreme temperatures.
In conclusion, the DMG6602SVTQ-7 is an excellent choice for a variety of logic and switching applications. Its wide range of operating parameters, high on-resistance, low input capacitance, and integrated thermal protection make it perfect for a variety of demanding system designs. This makes it an excellent choice for a wide range of applications within the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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