Allicdata Part #: | DMG6601LVT-7DITR-ND |
Manufacturer Part#: |
DMG6601LVT-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V 26TSOT |
More Detail: | Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW ... |
DataSheet: | DMG6601LVT-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | DMG6601 |
Supplier Device Package: | TSOT-26 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 850mW |
Input Capacitance (Ciss) (Max) @ Vds: | 422pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 12.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 3.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A, 2.5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG6601LVT-7, also known as high voltage dual FET array, is a type of device used to improve the performance of digital circuits. It is designed using CMOS technology and consists of two independent FETs, each with an on-chip voltage limiter. It has been developed to provide an improved performance, greater density, and a wide range of applications including:
Application Field
- High Voltage Analog Switching
- Level Detection and Non-Linear Circuit Transfer Functions
- Clamping Circuits and Automotive Load Dumping
- High Voltage DC-DC Converters
- Parasitic Diode Replacement
The DMG6601LVT-7 is also suitable for use in interface circuits, clock drivers, low noise input amplifiers and logic level shifters.
Working Principle
The DMG6601LVT-7 is a dual FET array that consists of two independent FETs. The FETs are connected in parallel to form a two-current-source network. The two FETs are connected differently in order to achieve different functions. When the two FETs are combined, the input and output characteristics of the DMG6601LVT-7 are remarkably improved. Each FET in the array also has a built-in voltage limiter to protect the device from overvoltage.
The DMG6601LVT-7 is highly flexible and is suitable for a variety of applications. For example, in high voltage analog switching, the device can be used to quickly switch from one voltage level to another. The DMG6601LVT-7 can also be used in a high voltage level detection and non-linear circuit transfer function. For this purpose, the device can be used to detect the input voltage and drive the output accordingly. It can also be used in clamping circuits and automotive load dumping.
In addition, the DMG6601LVT-7 can be used in parasitic diode replacement. The device can be used to replace a diode in a circuit without any additional components. The device also offers a low cost solution for DC-DC converters, and is suitable for use in low noise input amplifiers and logic level shifters.
In summary, the DMG6601LVT-7 is a high-performance, high-voltage dual FET array that offers a wide range of applications. The device is highly flexible and is suitable for use in a variety of circuits, including high voltage analog switching, level detection and non-linear circuit transfer functions, clamping circuits, automotive load dumping, parasitic diode replacement and DC-DC converters. It is also suitable for use in low noise input amplifiers and logic level shifters.
The specific data is subject to PDF, and the above content is for reference
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