Allicdata Part #: | DMG6402LDM-7DITR-ND |
Manufacturer Part#: |
DMG6402LDM-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 5.3A SOT26 |
More Detail: | N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount S... |
DataSheet: | DMG6402LDM-7 Datasheet/PDF |
Quantity: | 12000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.12W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 404pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMG6402LDM-7 is an N-channel, surface-mounted, single-drain MOSFET that can be used to control current flow in many applications. It has low power consumption, low threshold voltage, and fast switching speeds. Additionally, it offers ESD protection, making it suitable for industrial and automotive applications.
The DMG6402LDM-7 has a maximum breakdown voltage rating of 25 volts, a maximum drain-source voltage of 25V, and a maximum gate-source voltage of 20V. It has a Drain Current rating of 6A, a Drain Efficiency rating of 0.015, and a Gate-Source Leakage Current of 100nA. It also has a maximum operating temperature of 175°C and a maximum storage temperature of 175°C.
The DMG6402LDM-7 is used in a variety of applications, including motor control, power switching, switching regulator circuits, and AC loads. It can also be used as an electronic switch, which can be used to control current flow in a variety of applications.
The working principle behind the DMG6402LDM-7 is based on the MOSFET (metal-oxide-semiconductor field-effect transistor). A MOSFET is a transistor that is composed of an insulated-gate field-effect transistor that is comprised of an insulated-gate and a metal-oxide semiconductor substrate. This substrate is made up of an n-type semiconductor and a p-type semiconductor. The n-type and p-type semiconductor materials are arranged in a certain way in order to create an electric field.
When a positive voltage is applied to the drain of the DMG6402LDM-7, the electric field between the gate and the source creates a channel. This channel allows electrons to flow from the source to the drain. The amount of current that is allowed to flow through the channel is determined by the applied voltage. By increasing or decreasing the voltage, the current that is allowed to be transferred can be controlled.
In addition to its use in regulating current, the DMG6402LDM-7 can also be used for switching applications, such as in logic circuits. It can also be used as an electronic switch for controlling the speed of a motor, or for controlling the intensity of an LED.
The DMG6402LDM-7 is a versatile device and can be used for a variety of applications. Its low power consumption and fast switching speeds make it suitable for industrial and automotive applications. It can be used to regulate current, switch, or control the speed of a motor. It has a maximum breakdown voltage rating of 25 volts, a maximum drain-source voltage of 25V, and a maximum gate-source voltage of 20V. It has a Drain Current rating of 6A, a Drain Efficiency rating of 0.015, and a Gate-Source Leakage Current of 100nA. The device has a maximum operating temperature of 175°C and a maximum storage temperature of 175°C.
The specific data is subject to PDF, and the above content is for reference
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