Allicdata Part #: | DMG6898LSD-13DITR-ND |
Manufacturer Part#: |
DMG6898LSD-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 20V 9.5A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 9.5A 1.28W Sur... |
DataSheet: | DMG6898LSD-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | DMG6898LSD |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.28W |
Input Capacitance (Ciss) (Max) @ Vds: | 1149pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 9.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG6898LSD-13 is a MOSFET array designed for two critical functions in semiconductor devices. It is primarily used as an analog switch and an overload protection switch. The main benefits of using this MOSFET array in a device are low leakage current at low temperature and high switching speed.
The DMG6898LSD-13 is a N-channel enhancement mode MOSFET that consists of three separate transistors in a monolithic package. Each transistor\'s source, drain, and gate are made of metal-oxide-semiconductor field effect transistors (MOSFETs) and the output of each transistor is connected to the input of the next transistor. This combination provides the device with a high-speed on/off switching ability, which makes the device desirable in applications where quick switching is required. The use of these three MOSFETs also enables the DMG6898LSD-13 to provide protection from overloading.
The DMG6898LSD-13 can be used in a variety of applications, including audio and video equipment, automotive electronics, network communications, digital data communications, cell phone antennas, and high-speed optical interfaces. With its small size and low power dissipation, it is an ideal choice for many applications. The low current requirements of the DMG6898LSD-13 make it an ideal choice for portable devices. Additionally, it can be used with a combination of digital logic controllers to control its on/off action.
The DMG6898LSD-13\'s working principle involves the flow of electrons between its source and drain. When the gate voltage is positive, the source-drain junction has a low-resistance. This allows electrons to move freely between the source and drain, thus creating a high on-state conductance. When the gate voltage is no longer positive, the source-drain junction has a large resistance, preventing electrons from moving freely between the source and drain, resulting in a low on-state conductance.
The DMG6898LSD-13 is a reliable device, designed with low power dissipation, low leakage current, and high switching speed in mind. As an analog switch, it is perfect for switching between devices, and as an overload protection switch, it is perfect for protecting against unexpected spikes in voltage or current. The combination of its three independent transistors allows for high-speed switching and overload protection, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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