Allicdata Part #: | DMG6602SVT-7DITR-ND |
Manufacturer Part#: |
DMG6602SVT-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V TSOT23-6 |
More Detail: | Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW ... |
DataSheet: | DMG6602SVT-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Base Part Number: | DMG6602 |
Supplier Device Package: | TSOT-23-6 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 840mW |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.1A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A, 2.8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMG6602SVT-7 is a high power, 150V composite vertical DMOS (VDMOS) transistor array. It is designed for use as a voltage regulator or slew rate control, and it can be used in applications from DC to 5GHz. This device has been designed to provide a high level of integration, providing a cost-effective solution for a variety of power management applications.
The DMG6602SVT-7 is suitable for use in a wide range of applications, including power amplifiers, voltage regulators, low noise amplifiers, and high frequency switching. It is also suitable for use in a variety of industrial electronic applications, such as light dimmers, electronic counter circuitry, and other interface and control applications.
The DMG6602SVT-7 is based on power MOSFETs and offers a number of configurable parameters, such as voltage and current ratings, Gate and Drain-Source-Breakdown voltages (VGS and VDS), and temperature coefficients. It also includes several control features, such as devices over temperature protection, current sensing, thermal impedance measurement, and protection against over voltage damage. It also offers protective circuitry against static electricity.
The DMG6602SVT-7 is designed to offer high performance and a low footprint in a single package. It is a single device that combines a power MOSFET and an integrated driver element. This device provides several features including a low on-state resistance, a high breakdown voltage, a high switching speed, and a low total power dissipation. The device is also designed to operate over a wide range of temperatures.
The DMG6602SVT-7 operates in a nonlinear mode, meaning that the Gate voltage (VGS) is the controlling factor for device operation. The Gate voltage is used to modulate the drain current and it determines the breakdown characteristics of the device. The Gate voltage must be high enough to initiate the conduction, and it must also be low enough to maintain the conduction. This can be achieved through the use of a high-side current limiter.
In a switching application, the DMG6602SVT-7 is used to provide a high switching speed and a high output current level. It can also be used in an amplifier circuit to provide a high input impedance and a high gain. The DMG6602SVT-7 is also used in voltage control and slope rate control applications, which often require accurate voltage regulation and low power dissipation.
The DMG6602SVT-7 is designed to be a reliable and cost effective solution for a variety of power management applications. It is designed for use in a wide range of industrial and commercial applications, providing a high level of integration and a high power level. This device is also designed to provide a wide range of safety features, making it ideal for use in a range of industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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