DMG6602SVT-7 Allicdata Electronics
Allicdata Part #:

DMG6602SVT-7DITR-ND

Manufacturer Part#:

DMG6602SVT-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 30V TSOT23-6
More Detail: Mosfet Array N and P-Channel 30V 3.4A, 2.8A 840mW ...
DataSheet: DMG6602SVT-7 datasheetDMG6602SVT-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Base Part Number: DMG6602
Supplier Device Package: TSOT-23-6
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 840mW
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMG6602SVT-7 is a high power, 150V composite vertical DMOS (VDMOS) transistor array. It is designed for use as a voltage regulator or slew rate control, and it can be used in applications from DC to 5GHz. This device has been designed to provide a high level of integration, providing a cost-effective solution for a variety of power management applications.

The DMG6602SVT-7 is suitable for use in a wide range of applications, including power amplifiers, voltage regulators, low noise amplifiers, and high frequency switching. It is also suitable for use in a variety of industrial electronic applications, such as light dimmers, electronic counter circuitry, and other interface and control applications.

The DMG6602SVT-7 is based on power MOSFETs and offers a number of configurable parameters, such as voltage and current ratings, Gate and Drain-Source-Breakdown voltages (VGS and VDS), and temperature coefficients. It also includes several control features, such as devices over temperature protection, current sensing, thermal impedance measurement, and protection against over voltage damage. It also offers protective circuitry against static electricity.

The DMG6602SVT-7 is designed to offer high performance and a low footprint in a single package. It is a single device that combines a power MOSFET and an integrated driver element. This device provides several features including a low on-state resistance, a high breakdown voltage, a high switching speed, and a low total power dissipation. The device is also designed to operate over a wide range of temperatures.

The DMG6602SVT-7 operates in a nonlinear mode, meaning that the Gate voltage (VGS) is the controlling factor for device operation. The Gate voltage is used to modulate the drain current and it determines the breakdown characteristics of the device. The Gate voltage must be high enough to initiate the conduction, and it must also be low enough to maintain the conduction. This can be achieved through the use of a high-side current limiter.

In a switching application, the DMG6602SVT-7 is used to provide a high switching speed and a high output current level. It can also be used in an amplifier circuit to provide a high input impedance and a high gain. The DMG6602SVT-7 is also used in voltage control and slope rate control applications, which often require accurate voltage regulation and low power dissipation.

The DMG6602SVT-7 is designed to be a reliable and cost effective solution for a variety of power management applications. It is designed for use in a wide range of industrial and commercial applications, providing a high level of integration and a high power level. This device is also designed to provide a wide range of safety features, making it ideal for use in a range of industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "DMG6" Included word is 14
Part Number Manufacturer Price Quantity Description
DMG6968LSD-13 Diodes Incor... 0.0 $ 1000 MOSFET N-CH 20V 6.5A 8-SO...
DMG6968UQ-7 Diodes Incor... -- 1000 MOSFET N-CH 20V 6.5A SOT2...
DMG6301UDW-7 Diodes Incor... -- 1000 MOSFET 2N-CH 25V 0.24A SO...
DMG6301UDW-13 Diodes Incor... -- 1000 MOSFET 2N-CH 25V 0.24A SO...
DMG6968UTS-13 Diodes Incor... -- 1000 MOSFET 2N-CH 20V 5.2A 8TS...
DMG6898LSDQ-13 Diodes Incor... 0.27 $ 1000 MOSFET 2N-CH 20V 9.5A 8SO...
DMG6402LDM-7 Diodes Incor... -- 12000 MOSFET N-CH 30V 5.3A SOT2...
DMG6968U-7 Diodes Incor... -- 147000 MOSFET N-CH 20V 6.5A SOT-...
DMG6968UDM-7 Diodes Incor... -- 12000 MOSFET 2N-CH 20V 6.5A SOT...
DMG6601LVT-7 Diodes Incor... -- 1000 MOSFET N/P-CH 30V 26TSOTM...
DMG6602SVT-7 Diodes Incor... -- 1000 MOSFET N/P-CH 30V TSOT23-...
DMG6402LVT-7 Diodes Incor... -- 3000 MOSFET N-CH 30V 6A TSOT26...
DMG6602SVTQ-7 Diodes Incor... -- 1000 MOSFET N/P-CH 30V TSOT26M...
DMG6898LSD-13 Diodes Incor... -- 1000 MOSFET 2N-CH 20V 9.5A 8SO...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics