Allicdata Part #: | DRA5113Z0LTR-ND |
Manufacturer Part#: |
DRA5113Z0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA5113Z0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DRA5113 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA5113Z0L is a bipolar junction transistor (BJT) designed to work in pre-biased configurations. In a pre-biased configuration, it is designed to accept a signal to reach a predetermined level and then quickly reach a steady state. This steady state then allows the transistor to convert the signal into an output voltage or current.
The DRA5113Z0L’s unique design makes it ideal for use in a variety of applications, including signal processing, power switching, and motor control. As a single BJT, it offers performance with low power requirements and is suitable for a variety of signal frequencies.
In order to make the most of the DRA5113Z0L’s pre-biased operational capabilities, its working principle must be understood. Generally speaking, the transistor is designed to exhibit a particular type of electrical response. This response is dependent on the signal level that it receives. If the signal is too low, the transistor will not reach a steady state. If the signal is too high, the transistor will quickly reach a steady state, but may end up exceeding its rated power.
The DRA5113Z0L has a three-terminal architecture, with an input, a output, and a gate. When the gate receives a signal, this triggers the current to flow through the input and output. When the current switches between the two, the output voltage is thereby generated. The resistance between the gate and output terminals is closely monitored, so that the output voltage remains stable.
The DRA5113Z0L can also be used in circuits with high switching frequencies, allowing for very fast response times when signal levels need to be adjusted. In its off-state, the DRA5113Z0L can also act as a voltage regulator. This means that the signal is limited to a certain level and the output voltage is locked at the desired level.
The DRA5113Z0L is a versatile and powerful single BJT designed to work in pre-biased configurations. With its low power requirements and the ability to switch frequencies quickly and accurately, it is suitable for a wide range of applications. The understanding of its working principle can help to optimize its performance and ensure successful operation.
The specific data is subject to PDF, and the above content is for reference
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