DRA5115G0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	100 kOhms
Base Part Number:	DRA5115
Supplier Device Package:	SMini3-F2-B
Package / Case:	SC-85
Mounting Type:	Surface Mount
Power - Max:	150mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DRA5115G0L transistor is an epitaxial silicon transistor which, in conjunction with its two terminals, is commonly used in application fields such as amplifier, high speed switching and other high frequency control. A DRA5115G0L transistor is a single, pre-biased bipolar junction transistor (BJT). It is composed of a collector base combination, connected with a single terminal known as the ‘gate’, acting as a control port to modulate the switching current. This terminal, along with the two other transistor terminals—the emitter and the base—forms the three-stage of a BJT device.The DRA5115G0L transistor is a single, pre-biased bipolar junction transistor (BJT). It has an excellent operating temperature range from -55 to +150 °C and is capable of handling power dissipation of up to 0.8W. Due to its compact size, this transistor can be easily embedded and implemented in various applications fields.The working principle of the DRA5115G0L is quite simple. Upon the application of a voltage of up to 25V at the terminal, the magnitude of junction current between the emitter and base section of the transistor increases proportional to this applied voltage. If there conditions are right, the current across the collector and the base of the transistor increases, while the current across the emitter and the base remains unchanged. In the last stage, a small change in the gate voltage of the transistor causes the current across the collector and base of the transistor to increase or decrease, resulting in a modulation of the switching current.The DRA5115G0L transistor is used for various application fields owing to its superior e features like excellent gain bandwidth product, high operating temperature. This device is commonly used for signal amplification, switching applications and control circuits. It is also used in diverse digital signal processing applications including radio frequency devices and communication systems. The DRA5115G0L transistor is also used in audio devices for operations like modulating signal voltage and signal current, signal amplification, and signal manipulation.In short, the DRA5115G0L transistor is a single, pre-biased bipolar junction transistor (BJT) with three terminals (gate, emitter and base), working at a specified voltage range. Due its superior features and small sized, it is widely used across various application fields such automotive, communication, industrial and consumer electronics. The transistor works on the principle of modulating the switching current. The magnitude of junction current between the emitter and the base of the transistor changes with change in the applied voltage, resulting in the modulation of switching current.

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