DRA5114T0L

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-85
Supplier Device Package:	SMini3-F2-B
Base Part Number:	DRA5114

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The DRA5114T0L is an impressive device when it comes to its applications and working principles. It is used in various applications and it is a pre-biased bipolar transistor.The DRA5114T0L is a type of bipolar junction transistor (BJT) with single pre-biased characteristics. It is commonly used in power supply circuits, logic circuits, amplifiers, and other applications that require a low-cost, reliable, high switching speeds. The DRA5114T0L utilizes a thick-film N-type semiconductor layer and an equally thick-film P-type semiconductor layer. The P-type semiconductor layer is connected to the N-type layer via a conductive junction and this junction is used to regulate the current that is flowing through the device.One of the primary features of the DRA5114T0L is its ability to support high switching speeds. This device is capable of switching at speeds of more than two hundred thousand Hertz. Its switching speed can reach even higher figures in the presence of increased voltage levels. As a result, it is capable of functioning in a wide range of applications.The DRA5114T0L’s high-speed switching characteristics also make it a great choice for power supply circuits. It can be used in a variety of power-related tasks such as providing a constant source of current for electronic devices and power supplies, regulating voltage levels and adjusting the levels of current and voltage in circuits.The DRA5114T0L’s ability to operate precise logic circuits is also an important feature. Its high switching speeds allow it to control and monitor the levels of current and voltage in a given circuit with great accuracy and this makes it a great choice for applications where precise control and operation of the circuit is necessary.The DRA5114T0L is also useful in applications that require high-bandwidth amplifiers. Its high switching speed and excellent linearity makes it a great choice for such applications. Its electronic power supplies and logic circuits can also be used to support high-bandwidth amplifiers.The DRA5114T0L’s ability to produce high power output is also another impressive feature. Its high output power makes it ideal for applications such as switching power supplies and pulse receivers. In addition, its current capacity and low on state losses make it suitable for the usage of high voltage power supplies and other high number of ampere applications.Finally, the DRA5114T0L’s ability to sustain reliable operation across a wide range of temperatures makes it a great choice for applications requiring low power maintained over an extended period of time. It is capable of functioning well in environments where other transistors would fail due to its proven reliability and ability to perform at a high level.In conclusion, the DRA5114T0L is a single pre-biased bipolar junction transistor that is suitable for a wide range of applications. Its features, such as its high switching speed, excellent linearity, and ability to sustain reliable operation across a wide range of temperatures make it a great choice for a variety of applications. Furthermore, its ability to support high-bandwidth amplifiers, provide a constant source of current for electronic devices and power supplies, regulate voltage levels and adjust the levels of current and voltage in circuits, make it a highly valuable device for use in a range of applications.

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