DRA5144W0L Allicdata Electronics
Allicdata Part #:

DRA5144W0LTR-ND

Manufacturer Part#:

DRA5144W0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA5144W0L datasheetDRA5144W0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04683
6000 +: $ 0.04215
15000 +: $ 0.03747
30000 +: $ 0.03513
75000 +: $ 0.03122
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Base Part Number: DRA5144
Supplier Device Package: SMini3-F2-B
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRA5144W0L is a pre-biased, single bipolar junction transistor (BJT) designed to be used in a wide range of applications. It is a 6-pin device that can be used to either boost or reduce the signal strength of a signal, depending on the design. The device is optimized for use in high-frequency applications, such as RF and communications. The DRA5144W0L is specially designed for use in applications requiring high speed and low power consumption.

The DRA5144W0L utilizes a single NPN configuration, which makes it ideal for design applications in which speed and power are of paramount importance. The main advantage of this device is its high switching speed, thanks in part to its pre-bias feature, which allows it to switch faster than standard BJT transistors. As a result, this device can reduce power consumption in a high-speed environment, improving overall performance.

The device is composed of semiconductor material in order to take advantage of semiconductor properties and to harness them for various applications. The primary purpose of the DRA5144W0L is to convert base current into collector current, which is then amplified and used to control the voltage of a circuit. The base current is controlled by applying a voltage to the base electrode, and the collector current is then amplified and used to control the output voltage.

The DRA5144W0L has a high current gain of up to 500, meaning that it can amplify a relatively small current into a larger current. This allows DC signals to be amplified more efficiently, which is useful for applications such as AC adaptors and DC motors. The device also has a low noise figure, making it suitable for low-noise applications such as communication systems. Additionally, the device has a relatively low series base resistance, allowing it to function as an efficient switch in a circuit.

In conclusion, the DRA5144W0L is an effective pre-bias, single transistor device. It is specially designed for high-speed and low-power applications, and it can be used to either boost or reduce the signal strength of a signal. Its high current gain and low noise figure make it particularly suitable for use in communication systems and other low-noise applications. Additionally, its low base resistance allows it to be used as an efficient switch in a circuit. Thus, the DRA5144W0L is an ideal choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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