DRA5144E0L Allicdata Electronics
Allicdata Part #:

DRA5144E0LTR-ND

Manufacturer Part#:

DRA5144E0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA5144E0L datasheetDRA5144E0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DRA5144
Supplier Device Package: SMini3-F2-B
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DRA5144E0L Application Field and Working Principle

DRA5144E0L transistors belong to the category of single, pre-biased bipolar junction transistors (BJT). These transistors are widely used in different application fields such as power supply circuits, gain blocks, tunable LC filters, and other RF amplifiers.

DRA5144E0L transistors are designed for operation over a wide range of temperatures and power supplies. These devices feature low noise, high-power gain, and low current consumption. The transistors are also designed to offer high-frequency operation with high-efficiency.

The operating principle of DRA5144E0L transistors is based on the bipolar junction effect. The two main junction regions, the emitter and the base, form a P-N junction which is responsible for controlling the current. The current flows through the transistor when the gate voltage is above a certain threshold level. The current then moves between the emitter and the collector, depending on the gate voltage.

The emitter is biased positively with respect to the base, which triggers the flow of current from the emitter to the collector. This is the basic operating principle of the BJT, and it is applicable for DRA5144E0L transistors as well.

The pre-biased feature of DRA5144E0L transistors helps reduce the charge stored in the input capacitance, resulting in high-speed operation. This helps reduce power consumption, as well as save on space. Furthermore, the low-noise performance of these transistors helps improve the performance of RF amplifiers and other devices.

In addition to the pre-biased feature, DRA5144E0L transistors also feature low-power consumption. As the power consumption is low, the overall efficiency of the transistors is very high. This helps improve the overall performance of RF amplifiers, gain blocks, and other devices.

Overall, DRA5144E0L transistors are designed for various applications, such as power supply circuits, gain blocks, tunable LC filters, and other RF amplifiers. These devices are pre-biased, low-power, and low-noise, which gives them several advantages such as higher efficiency, lower power consumption, and improved performance.

The specific data is subject to PDF, and the above content is for reference

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