Allicdata Part #: | DRA5114Y0LTR-ND |
Manufacturer Part#: |
DRA5114Y0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA5114Y0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DRA5114 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA5114Y0L is a pre-biased, single Bipolar Junction Transistor (BJT) used mainly to perform basic amplification, switching, and low-level voltage control tasks. Pre-biased transistors can usually be used to optimize circuit performance, reduce power consumption, and lower the cost of the device.
A BJT is a semiconductor electronic device that are made up of two types of semiconductor material, called the base and emitter. These two semiconductor materials are combined in order to form an electrical junction. This junction acts like an amplifier, as it is sensitive to a small change in voltage, allowing for the amplification of the current passing through it.
The DRA5114Y0L is a NPN transistor, which means that when a small current is passed into the Base terminal, it will allow the flow of a larger current from the Emitter to the Collector terminal. The benefit of this type of transistor is that it is able to amplify a signal from a low energy source and output a high energy signal.
The DRA5114Y0L is typically used in circuits where a low voltage is needed for the operation of the circuit. The transistor is pre-biased, meaning that a small amount of current is applied to the Base terminal before the device is powered up. This enables the transistor to quickly enter its active mode, allowing it to amplify and switch a signal quickly, reducing power consumption and improving circuit performance.
The DRA5114Y0L has a number of different applications, such as audio amplifiers, motor control and switching circuits. As the transistor has a low voltage operation range, this makes it ideal for use in low voltage battery powered applications. Due to its pre-biased nature, the transistor is also popular for use in radio frequency (RF) applications, as it can quickly power up and switch an RF signal with minimal power usage.
To sum up, the DRA5114Y0L is an ideal choice for applications requiring a low power, fast switching, pre-biased single BJT transistor. Its various applications, low power requirements and pre-biased nature make it a great choice for RF and battery powered applications, as well as audio amplifiers and motor control circuitry.
The specific data is subject to PDF, and the above content is for reference
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