DRA5123Y0L

Resistor - Emitter Base (R2):	10 kOhms
Base Part Number:	DRA5123
Supplier Device Package:	SMini3-F2-B
Package / Case:	SC-85
Mounting Type:	Surface Mount
Power - Max:	150mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DRA5123Y0L is a surface mounted NPN silicon transistor with a pre-biased feature. This transistor can be used in a variety of circuits and applications, such as amplifiers and high frequency switching circuits. It is also used in power switching, motor control, and light emitting diode (LED) control applications. In this article, we will discuss the application fields and working principles of DRA5123Y0L.

Application Fields

DRA5123Y0L has many potential uses in a variety of applications. First of all, it can be used in amplifier circuits, either as a discrete component or as part of a larger integrated circuit system. It can be used to either increase or decrease the output voltage depending on the desired outcome. Furthermore, it is also used in high frequency switching circuits, such as those used in radio frequency (RF) circuits. It can be used to both switch and amplify signals.In addition, DRA5123Y0L can be used in power switching circuits. It can be used to control the current flow in a circuit and can be used to either turn on or turn off the power. This is a useful feature in circuits that require precise control over the power flow. Finally, this transistor can also be used in LED control applications to control the intensity of the LEDs.

Working Principle

The DRA5123Y0L is an NPN transistor and operates based on the same principles as other bipolar transistors. It consists of three terminals, the base, collector, and emitter. A current flows through the transistor based on the interaction between these three terminals.At the base terminal, a small base current is required to begin the flow of current from the collector to the emitter. This is known as the biasing operation, and the transistor is said to be pre-biased based on the requirements of the circuit. The voltage at the base determines the amount of current that can flow through the transistor.Once the base current is applied, the collector-emitter current flows, and this current is determined by the difference between the base and collector voltages. It is this current flow that is then used in a variety of applications. It is also possible to measure the collector-emitter voltage of the transistor which can be used to calculate the current gain of the device.

Conclusion

In conclusion, DRA5123Y0L is a pre-biased NPN silicon transistor that is used in a variety of applications. It is used in amplifiers and high frequency switching circuits, power switching circuits, and LED control applications. It operates on the same basic principles as other bipolar transistors, with a biasing operation required in order to begin the current flow from the collector to the emitter. Additionally, it is possible to measure the collector-emitter voltage of the transistor in order to obtain the current gain of the device.

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