DRA5143E0L Allicdata Electronics
Allicdata Part #:

DRA5143E0LTR-ND

Manufacturer Part#:

DRA5143E0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA5143E0L datasheetDRA5143E0L Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 3000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 4.7 kOhms
Base Part Number: DRA5143
Supplier Device Package: SMini3-F2-B
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors - Bipolar (BJT) - Single, Pre-Biased

The DRA5143E0L is a single-transistor device in the bipolar junction transistor (BJT) family. It is suitable for pre-biased applications and is commonly used in industrial and consumer electronic applications, such as power management, motor control, and other high-power devices. This device offers a variety of features such as low ON resistance, high efficiency, and high current-handling capability.

Working Principle

A bipolar junction transistor (BJT) is a three-terminal device composed of two semiconductor materials. It is made up of three layers: an emitter, a base, and a collector. When a suitable voltage is applied to the base terminal, it allows current to flow from the emitter to the collector. This device is commonly used as an amplifier or switch due to its current-control capability.

In a pre-biased application, the emitter and base electrodes are biased with a fixed voltage, thereby allowing current to flow through the transistor even at low input voltages. This enables the device to operate as an amplifier and switch, providing higher gain and current-handling capability than with a conventional two-transistor design.

Application Field

The DRA5143E0L is a pre-biased single BJT used for high-power applications. It can be used in any circuit requiring a high current device, such as power management and motor control. Additionally, it can be used in circuits with both AC and DC inputs, as it can handle large voltage fluctuations.

The device is also suitable for low-noise operation, as its low ON resistance reduces the amount of noise generated by the transistor. Additionally, its high efficiency and low ON resistance enable the device to operate at higher frequencies with minimal power loss. This makes it ideal for use in switching applications, such as motor control, lighting control, and other high-frequency applications.

The device’s high-speed switching capability also makes it suitable for use in time-critical applications, such as digital signal processing. Additionally, its high collector current-handling capability makes it ideal for circuits that require high efficiency power delivery.

Conclusion

The DRA5143E0L is a pre-biased single BJT device that is suitable for a wide range of applications. It is designed for high-power applications and offers a variety of features such as low ON resistance, high efficiency, and high current-handling capability. The device is suitable for any circuit requiring a high current device, such as power management and motor control, and is also suitable for use in switching applications, such as motor control, lighting control, and other high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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