Allicdata Part #: | DRA5143E0LTR-ND |
Manufacturer Part#: |
DRA5143E0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA5143E0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Base Part Number: | DRA5143 |
Supplier Device Package: | SMini3-F2-B |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
The DRA5143E0L is a single-transistor device in the bipolar junction transistor (BJT) family. It is suitable for pre-biased applications and is commonly used in industrial and consumer electronic applications, such as power management, motor control, and other high-power devices. This device offers a variety of features such as low ON resistance, high efficiency, and high current-handling capability.
Working Principle
A bipolar junction transistor (BJT) is a three-terminal device composed of two semiconductor materials. It is made up of three layers: an emitter, a base, and a collector. When a suitable voltage is applied to the base terminal, it allows current to flow from the emitter to the collector. This device is commonly used as an amplifier or switch due to its current-control capability.
In a pre-biased application, the emitter and base electrodes are biased with a fixed voltage, thereby allowing current to flow through the transistor even at low input voltages. This enables the device to operate as an amplifier and switch, providing higher gain and current-handling capability than with a conventional two-transistor design.
Application Field
The DRA5143E0L is a pre-biased single BJT used for high-power applications. It can be used in any circuit requiring a high current device, such as power management and motor control. Additionally, it can be used in circuits with both AC and DC inputs, as it can handle large voltage fluctuations.
The device is also suitable for low-noise operation, as its low ON resistance reduces the amount of noise generated by the transistor. Additionally, its high efficiency and low ON resistance enable the device to operate at higher frequencies with minimal power loss. This makes it ideal for use in switching applications, such as motor control, lighting control, and other high-frequency applications.
The device’s high-speed switching capability also makes it suitable for use in time-critical applications, such as digital signal processing. Additionally, its high collector current-handling capability makes it ideal for circuits that require high efficiency power delivery.
Conclusion
The DRA5143E0L is a pre-biased single BJT device that is suitable for a wide range of applications. It is designed for high-power applications and offers a variety of features such as low ON resistance, high efficiency, and high current-handling capability. The device is suitable for any circuit requiring a high current device, such as power management and motor control, and is also suitable for use in switching applications, such as motor control, lighting control, and other high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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