DRA5115E0L Allicdata Electronics

DRA5115E0L Discrete Semiconductor Products

Allicdata Part #:

DRA5115E0LTR-ND

Manufacturer Part#:

DRA5115E0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA5115E0L datasheetDRA5115E0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04683
6000 +: $ 0.04215
15000 +: $ 0.03747
30000 +: $ 0.03513
75000 +: $ 0.03122
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 100 kOhms
Base Part Number: DRA5115
Supplier Device Package: SMini3-F2-B
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DRA5115E0L is a single-stage, pre-biased, lateral bipolar junction transistor (BJT), which is manufactured by Diodes Inc. It finds application in numerous areas from automotive and medical to data communications and wireless applications.

A lateral BJT is an enhanced type of BJT, which has its base and collector terminals combined into a single piece of semiconductor. It is similar in design and operation to a normal BJT, but instead of having separate collector and base regions, the collector and base terminals are formed together within the same piece of semiconductor. This combined configuration makes the device more efficient and reliable than a traditional BJT.

The DRA5115E0L is designed to be a very low-power device and has a voltage range of 30V. It has an on-state current of 0.25 A and an off-state current of 0.1 A. Its maximum power dissipation rating is 1.2 W. It also has a hFE rating of 20.

The working principle of the device is similar to that of a conventional BJT; it uses a BJT as its core component. A voltage is applied to the base which induces a current in the collector. This current is then amplified by the base-emitter junction and passed on to the base of the BJT. The amplified current then travels through the collector and out of the device.

The DRA5115E0L is used in many different applications, including automotive, medical, data communications, low-power audio, wireless, and power conversion applications. In automotive applications, the device is used as a driver circuit for controlling various electric and electronic components. In medical applications, it is used to amplify signals from medical devices such as ECG machines. Data communication applications use the device as a low-power amplifier for digital signals, while wireless applications use the device as a driver for transmitting and receiving radio frequencies. Furthermore, the device is also widely used in power conversion applications such as DC-DC and AC-DC converters.

In conclusion, the DRA5115E0L is a single-stage, pre-biased, lateral bipolar junction transistor which is rendered ideal for applications that require low power operation. Its enhanced design and working principle lend it a degree of efficiency and reliability, which are especially beneficial for automotive, medical, and wireless applications.

The specific data is subject to PDF, and the above content is for reference

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