DRA5143Z0L

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The DRA5143Z0L is a single, pre-biased, NPN silicon transistor produced by Motorola. It is designed for radio-frequency circuits, primarily for amplifying and switching applications. The device is also suitable for use as an oscillator, detector, and power amplifier.

Characteristics and Specifications

The DRA5143Z0L has a maximum collector-emitter voltage of 30V, a minimum current gain of 90, and a maximum collector-emitter saturation voltage of 0.2V. It is packaged in the SOT-89 package, which is designed to dissipate a maximum heat of 2.35W. It has a maximum operating temperature of 150 degrees Celsius.

Application Fields

The primary application fields of the DRA5143Z0L are radio-frequency circuits, primarily for amplifying and switching applications. It is suitable for use in a variety of applications, including amplifying audio and video signals, amplification and switching of radio-frequency voltage signals, and oscillator and detector circuits. Additionally, it can be used as a power amplifier in radio-frequency circuits.

Working Principle

The DRA5143Z0L is a bipolar junction transistor (BJT), meaning that it relies on two PN junctions for operation. When a forward bias is applied to the base-emitter terminals, a small current (known as a "base current") is generated which causes the electrons to flow from the emitter to the collector, creating a usable current flow. This is known as the "Ebers-Moll equation", and is the fundamental principle behind the operation of BJT transistors. The amount of current that is generated is proportional to the amount of current flowing through the collector-base junction and the magnitude of the forward bias voltage. As a result, by carefully controlling the values of the current and voltage, the amount of current flowing through the transistor can be varied. This makes the DRA5143Z0L extremely useful in amplifying and switching applications.

Conclusion

The DRA5143Z0L is a single, pre-biased NPN silicon transistor that is primarily used for amplifying and switching applications. It is packaged in an SOT-89 package and can operate at temperatures up to 150 degrees Celsius. It is based on the Ebers-Moll equation and relies on two PN junctions to generate usable current flow when a forward bias is applied. By carefully controlling the current and voltage, the amount of current flowing through the transistor can be varied, making it very useful in amplifying and switching applications.

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