DTA015TEBTL Discrete Semiconductor Products |
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Allicdata Part #: | DTA015TEBTLTR-ND |
Manufacturer Part#: |
DTA015TEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V 0.15W SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA015TEBTL Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
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DTA015TEBTL is one of a family of pre-biased transistors made by STMicroelectronics. It is used in a number of applications, including power management and lighting, as well as wireless communications and automotive systems.
The DTA015TEBTL has two separate layers of semiconductor material. The base layer is made of a typical P-type material, while the collector layer is made from an N-type material. Connected together, these layers create a BJT (bipolar junction transistor). This kind of transistor is known as a PNP device because the majority of carriers in the collector layer are holes.
A BJT can be used as a switch, allowing current to pass through when the base current is at a certain level, or it can also be used as a voltage amplifier. The DTA015TEBTL is designed to be used as a switch, but can be used as a voltage amplifier in some circumstances. The DTA015TEBTL has a Pc (Collector-to-Emitter current limit) of 0.15 A, a V (Collector-to-Emitter voltage) of 40 V and a Tr8 (Switching speed) of 7.5 ns.
The DTA015TEBTL is designed for a typical biasing voltage of 5 V. When a current is applied to the base, it will “turn on” allowing a larger current to flow through the collector-emitter region. The amount of current allowed through is determined by the biasing voltage, which is why the DTA015TEBTL is considered a pre-biased transistor. This means that the current will be able to flow through the device before the voltage is applied allowing for higher performance levels.
The DTA015TEBTL is also designed to minimize power dissipation and reduce thermal resistance. This means that the device is less likely to overheat when in use. This contributes to its suitability for use in power management and lighting applications, as well as automotive and communications systems.
In summary, the DTA015TEBTL is a pre-biased PNP bipolar junction transistor designed for a 5 V biasing voltage. It is designed to provide high performance switching with minimal power dissipation and thermal resistance. The DTA015TEBTL is suitable for use in a variety of applications, including power management and lighting, wireless communications, and automotive systems.
The specific data is subject to PDF, and the above content is for reference
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