DTA015TEBTL Allicdata Electronics

DTA015TEBTL Discrete Semiconductor Products

Allicdata Part #:

DTA015TEBTLTR-ND

Manufacturer Part#:

DTA015TEBTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 50V 0.15W SC89
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA015TEBTL datasheetDTA015TEBTL Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Description

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DTA015TEBTL is one of a family of pre-biased transistors made by STMicroelectronics. It is used in a number of applications, including power management and lighting, as well as wireless communications and automotive systems.

The DTA015TEBTL has two separate layers of semiconductor material. The base layer is made of a typical P-type material, while the collector layer is made from an N-type material. Connected together, these layers create a BJT (bipolar junction transistor). This kind of transistor is known as a PNP device because the majority of carriers in the collector layer are holes.

A BJT can be used as a switch, allowing current to pass through when the base current is at a certain level, or it can also be used as a voltage amplifier. The DTA015TEBTL is designed to be used as a switch, but can be used as a voltage amplifier in some circumstances. The DTA015TEBTL has a Pc (Collector-to-Emitter current limit) of 0.15 A, a V (Collector-to-Emitter voltage) of 40 V and a Tr8 (Switching speed) of 7.5 ns.

The DTA015TEBTL is designed for a typical biasing voltage of 5 V. When a current is applied to the base, it will “turn on” allowing a larger current to flow through the collector-emitter region. The amount of current allowed through is determined by the biasing voltage, which is why the DTA015TEBTL is considered a pre-biased transistor. This means that the current will be able to flow through the device before the voltage is applied allowing for higher performance levels.

The DTA015TEBTL is also designed to minimize power dissipation and reduce thermal resistance. This means that the device is less likely to overheat when in use. This contributes to its suitability for use in power management and lighting applications, as well as automotive and communications systems.

In summary, the DTA015TEBTL is a pre-biased PNP bipolar junction transistor designed for a 5 V biasing voltage. It is designed to provide high performance switching with minimal power dissipation and thermal resistance. The DTA015TEBTL is suitable for use in a variety of applications, including power management and lighting, wireless communications, and automotive systems.

The specific data is subject to PDF, and the above content is for reference

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