DTA043TEBTL Allicdata Electronics

DTA043TEBTL Discrete Semiconductor Products

Allicdata Part #:

DTA043TEBTLTR-ND

Manufacturer Part#:

DTA043TEBTL

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 50V 0.15W SC89
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA043TEBTL datasheetDTA043TEBTL Datasheet/PDF
Quantity: 1000
1 +: $ 0.02000
10 +: $ 0.01940
100 +: $ 0.01900
1000 +: $ 0.01860
10000 +: $ 0.01800
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Description

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The DTA043TEBTL is a single-coil, pre-biased bipolar junction transistor (BJT) that is capable of performing a wide range of functions. It can be used in many different applications due to its versatile design. This article will discuss the range of applications and the underlying principles of the device.

The DTA043TEBTL is a BJT that is designed with a high-performance NPN configuration. It is a low-power transistor that has a maximum current rating of 1.5A and a maximum collector-emitter voltage of 30V. It also has a maximum collector-base voltage of 45V and a maximum total power dissipation rating of 350mW. Its on-state resistance is 0.2Ω and its breakdown voltage is 50V.

The transistor is designed to be operated at either DC or AC. When used in AC circuits, it can operate at frequencies of up to 200MHz. It also features a band gap voltage of 6V and a predetermined gate voltage. This means that it can be used in circuits where it is necessary to predetermine the gate voltage.

There are a range of applications where the DTA043TEBTL can be used. It has excellent performance in low-noise amplifiers, RF circuits, and pulse circuits. It can also be used in linear and switching applications that require high-speed and accurate control of signals. It is also used in voltage regulation and power management applications.

The DTA043TEBTL\'s working principle is based on the operation of BJTs. When two diodes are connected in a common circuit, a transistor is created. The two diodes act as the base and collector of the transistor, with the emitter connected to ground. When a voltage is applied to the base, it causes electrons to flow from the base to the collector, creating a current. This current is then used to control current through the emitter and subsequently the circuit as a whole.

The operation of the DTA043TEBTL is based on this principle and alters the behaviour of the current through the circuit when the base voltage is changed. This allows it to be used in applications where it is necessary to regulate voltage or current in a circuit. It can also be used in switching applications where it is necessary to quickly and accurately turn on or off the current flow.

In conclusion, the DTA043TEBTL is a versatile bipolar junction transistor (BJT) that can be used for a variety of applications. It has a high-performance NPN configuration and can be operated at either DC or AC. Its working principle is based on the operation of BJTs and allows it to be used to regulate voltage or current in a circuit as well as in switching applications.

The specific data is subject to PDF, and the above content is for reference

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