DTA023JEBTL Allicdata Electronics

DTA023JEBTL Discrete Semiconductor Products

Allicdata Part #:

DTA023JEBTLTR-ND

Manufacturer Part#:

DTA023JEBTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 50V 0.15W SC89
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA023JEBTL datasheetDTA023JEBTL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
Description

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DTA023JEBTL transistors are classified as single, pre-biased bipolar junction transistors (BJT). They are commonly used in applications such as DC motor control, on-off switch control, pulse width modulation (PWM) control, and voltage-controlled oscillators. These transistors are designed for use in a wide range of analog and digital control circuits, providing a high level of electrical performance and reliability.

The DTA023JEBTL transistor is also known as an N-P-N depletion-mode transistor, as it is well suited for pre-biasing circuits with high level injection. It consists of an NPN power transistor built in a leaded-package with an integrated gate that controls the amount of current allowed to flow through it. With the integrated gate, the power transistor can be pre-biased and the on-state resistance can be adjusted to meet the desired application requirements. The system can then be controlled digitally or with an external signal.

One of the primary benefits of the DTA023JEBTL transistor is its high current-handling capability. This capability is achieved by the integrated gate, which applies a voltage to the base of the transistor that changes the transistor’s operation from an open-drain mode to a conducting mode. In this conducting mode, the transistor can handle higher amounts of current, allowing for higher power levels to be transferred.

The DTA023JEBTL transistor utilizes a bipolar operating junction that allows current to flow in both directions through the device. This bipolar junction is designed to operate at a low voltage, allowing it to be used in low-voltage and lower-frequency applications. Additionally, the integrated gate ensures that there is little change in the on-state resistance across the entire operational range of the device, improving performance and ensuring system stability.

The DTA023JEBTL transistor offers excellent frequency response, providing fast switching capabilities. This is due to the transistor’s excellent switching characteristics at high operating frequencies and the integrated gate that is able to quickly adjust the on-state resistance, making it ideal for frequency-sensitive applications. Furthermore, it is able to withstand high voltages and temperatures and is RoHS compliant, making it ideal for use in harsh environments.

The DTA023JEBTL transistor is an ideal choice for applications that require reliable, high-performance transistor solutions. It provides excellent frequency response, high current-handling capabilities, low on-state resistance, and superior thermal and electrical features, making it a great choice for a wide range of applications. This reliable and rugged transistor device is ideal for pre-biased circuits with high level injection and will ensure long service life and excellent system performance.

The specific data is subject to PDF, and the above content is for reference

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