DTA023YMT2L Discrete Semiconductor Products |
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Allicdata Part #: | DTA023YMT2LTR-ND |
Manufacturer Part#: |
DTA023YMT2L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA023YMT2L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA023YMT2L bipolar junction transistor (BJT) is a single, pre-biased component designed for a variety of applications. This part has a collector-emitter voltage of 45 volts, a collector current of 0.3 amperes, and an emitter-base voltage of 12 volts. It is a surface mount component with a 2-pin leadless package and a maximum power dissipation of 1000mW. It is also rated for a range of temperatures from -55C to +125C.
The DTA023YMT2L is designed for low-cost, high-performance bipolar applications. It is especially useful for application circuits designed for audio, video, communication, and other RF products, where the bias requirements and operating conditions are not too demanding and the device performance demands are lower. This BJT is well suited for the application of active loads in low noise amplifier (LNA) circuits, low noise figure amplifier (LNFA) circuits, low voltage and low current switching circuits, and analog circuits with low offset voltage.
The typical working principle of a BJT is to create a switch between two terminals - the collector, and the emitter - to control the flow of current. It works by creating a voltage potential between the emitter and the collector and controlling the flow of current. The transistor is biased so that the current flows only when the voltage potential between the emitter and collector reduces below the threshold voltage. This enables it to control current without the need for a gate voltage.
In a DTA023YMT2L, the base is pre-biased using an RC network. This circuit allows the transistor to act as a variable current source between the collector and the emitter. This means that the transistor can be used to control the flow of current without the need for a gate voltage. It also allows the transistor to operate more efficiently.
The DTA023YMT2L is also well suited for use in power supply circuits, high speed motor control, UPS circuits, and computer peripherals. It can be used in applications that require low voltage and low current switching, as well as applications that require high frequency driver circuits. The part is also suitable for battery backed up systems, due to its current capability and low power dissipation.
The DTA023YMT2L is a versatile and reliable single, pre-biased BJT that is perfect for a variety of applications. It provides excellent current handling capabilities, as well as a low power dissipation profile. Its RC network pre-biased base circuit allows it to be used as a variable current source between the collector and the emitter. This makes the DTA023YMT2L ideal for audio, video, communication, and other RF products, as well as for low voltage, low current switching, power supply, and UPS circuits.
The specific data is subject to PDF, and the above content is for reference
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