Allicdata Part #: | DTA023JMT2LTR-ND |
Manufacturer Part#: |
DTA023JMT2L |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V VMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA023JMT2L Datasheet/PDF |
Quantity: | 8000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
8000 +: | $ 0.01985 |
16000 +: | $ 0.01687 |
24000 +: | $ 0.01588 |
56000 +: | $ 0.01489 |
200000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA023JMT2L is a single-bipolar junction transistor (BJT) pre-biased by an integrated chip, typically found in a wide range of industrial, consumer and telecommunications applications. As a result, it is essential to understand the applications field and working principle of the DTA023JMT2L in order to determine its suitability for any given project.
The main application field of the DTA023JMT2L is in low noise, high accuracy DC amplifiers. It can be used for amplifying audio signals or for DC power control. Additionally, it can be used in interface technology, such as for transmitting signals from one system to another. The DTA023JMT2L can also be used in high-voltage and high-temperature environments, making it ideal for any project that requires a reliable, high-performance transistor.
The DTA023JMT2L is comprised of an N-type metal-oxide-semiconductor field-effect transistor (MOSFET) and a PN junction diode. The N-MOSFET, also known as a depletion-mode device, is a voltage-controlled semiconductor that can be used to enhance or decrease the current flow in a circuit. The PN junction diode, likewise, is a two-terminal device that can be used to perform various functions, including rectifying signals and controlling voltage levels. Together, these two components form the basis of the DTA023JMT2L.
The working principle of the DTA023JMT2L is quite straightforward. When a voltage is applied to one of its terminals, the PN junction diode will either allow or restrict the current flow, depending on the direction of the voltage and the specific threshold properties of the junction. Meanwhile, the N-MOSFET will act as a resistor in the circuit, allowing the current to flow freely in one direction, while restricting it in the other. By carefully adjusting the resistance values in the circuit, the DTA023JMT2L can be used to precisely control the current flow and voltage levels in the circuit.
In summary, the DTA023JMT2L is a reliable and versatile single bipolar pre-biased transistor that is suitable for a wide range of applications. It can be used in low-noise and high-accuracy amplifiers, interface technology, and a variety of other projects. What’s more, its integrated components make it an efficient and cost-effective device. Consequently, the DTA023JMT2L is a great solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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