Allicdata Part #: | DTA015EUBTLTR-ND |
Manufacturer Part#: |
DTA015EUBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V 0.2W UMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA015EUBTL Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | UMT3F |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
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The DTA015EUBTL is a single, pre-biased bipolar junction transistor (BJT) that is used in a variety of applications in the electronics industry. This device can be used for both linear and switching applications, and has an integrated feature that allows it to be used in high-speed applications. The device can be used in a variety of topologies, from differential pairs to single-ended input/output configurations. The device is also well suited for higher bandwidth power applications.
The DTA015EUBTL is a NPN silicon-based BJT transistor with a voltage range of up to 10V and a current limit of up to 1A. It operates with a collector-emitter voltage (VCE) of 5V and a base emitter voltage (VBE) of 2.5V. The device has an on-resistance (RDS(ON)) of 5 ohms with a maximum power dissipation of 800mW. It also has a collector cutoff current (ICEO) of 0.1uA and a transconductance (gm) of 2.5 mS.
The DTA015EUBTL is an excellent choice for high-speed applications due to its low on-resistance and low saturation voltage. The device has a very low turn-on time, allowing it to work at very high frequencies. This device is also well suited for power applications, due to its high voltage and current ratings and low power dissipation.
The working principle of the DTA015EUBTL is based on the operation of a BJT. When the base terminal of the transistor is energized, it turns on: electrons flow from the emitter to the collector. The voltage and current between the emitter and collector terminals are proportional to the voltage applied to the base terminal. The emitter current will be limited by the base voltage and collector current, and the collector current will be limited by the base voltage, load resistance, and the internal transistor properties.
In addition, the DTA015EUBTL has one unique feature: the ability to be driven from a single supply. This feature allows the device to be used in topologies where one side is most or all of the time at ground, for example, in single-ended input or output configurations. This feature also allows the device be used as a driver for higher impedance loads, such as capacitance-coupled devices.
The DTA015EUBTL is an excellent choice for a wide variety of applications. It is well suited for high frequency, high power, and single-supply applications. Its low on-resistance and integrated feature makes it a great option for a wide range of applications, including switching circuits, amplifiers, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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