| Allicdata Part #: | DTA015TUBTLTR-ND |
| Manufacturer Part#: |
DTA015TUBTL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS PNP 50V 0.2W UMT3F |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  DTA015TUBTL Datasheet/PDF |
| Quantity: | 3000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA (ICBO) |
| Frequency - Transition: | 250MHz |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-85 |
| Supplier Device Package: | UMT3F |
Description
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The DTA015TUBTL is a type of pre-biased single bipolar junction transistor (BJT). It is a high-voltage, high-current transistor that is commonly used in power supply circuits. This device is ideal for applications where fast switching and high breakdown voltage capabilities are required. It is also a popular choice for applications where size and efficiency are critical, as it offers a low power consumption compared to other bipolar transistors. As a single prebiased bipolar junction transistor, the DTA015TUBTL works by allowing current to pass through it. It has a collector and emitter that are connected to two different power sources. When a small current, known as a base current, is applied to the base terminal of the device, a large current, known as a collector current, is allowed to pass through the device. This process is known as current amplification. The DTA015TUBTL’s pre-bias capabilities are beneficial for applications where fast switching is necessary. Since the base is already biased, it is possible to quickly turn the device on or off, which allows for high switching speeds. The primary benefit of this device’s pre-bias design is that the collector current can be precisely controlled, allowing for greater accuracy and control in the circuit. The DTA015TUBTL is also an ideal choice for applications where high breakdown voltages are required. The device’s on-state breakdown voltage is typically rated at 500 volts, and its off-state breakdown voltage is typically rated at 600 volts, making it suitable for a range of high-voltage applications. The device also features a wide temperature range, which makes it suitable for use in extreme climates. In addition to its fast switching capabilities and high breakdown voltages, the DTA015TUBTL is a popular choice for applications where size and efficiency are critical. The device is comparatively small, with a standard through-hole package size of about half a millimeter in width, and its low power consumption makes it a good choice for applications where power efficiency is paramount.In summary, the DTA015TUBTL is a single pre-biased bipolar junction transistor which is ideal for applications that require fast switching and high breakdown voltages. Its small package size and low power consumption make it a popular choice for applications where size and efficiency are important.The specific data is subject to PDF, and the above content is for reference
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