DTA044EEBTL Discrete Semiconductor Products |
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Allicdata Part #: | DTA044EEBTLTR-ND |
Manufacturer Part#: |
DTA044EEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V 0.15W SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA044EEBTL Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Description
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The DTA044EEBTL is a single pre-biased bipolar junction transistor (BJT). This type of transistor has been around since the 1950s but only recently have they started to be used in a variety of applications. A transistors primary purpose is to switch electric current and voltages. This transistor can be used in numerous applications such as amplifying weak signals and switching between circuits.The DTA044EEBTL requires very little power to operate and is designed to deliver reliable, long-term performance. It is composed of two p-type and one n-type semiconductors, which are arranged in three layers. The majority carrier type (hole or electron) in one of the layers is determined by the majority carrier type of the opposite layer. This configuration results in a transistor with two junctions between the three layers.The DTA044EEBTL is designed to handle up to a maximum collector-emitter voltage of 650V and a maximum collector-base voltage of 400V. It offers a wide range of operating current, ranging from 0.15mA to 0.5mA, and has an operating temperature range of -55°C to +150°C. The unit has a maximum power dissipation of 200mW and an impedance of 200K and a switching times of 16nsec.The DTA044EEBTL operating principle can be broken down into two main functions: current and voltage gain. In the current gain mode, it restricts a current output relative to the current input when the input voltage is above the base-emitter voltage of the transistor. Voltage gain is the ability of the transistor to boost the base-emitter voltage when the input is greater than the base-emitter voltage, which results in an increase of the current from the collector.The DTA044EEBTL application field is notable for its ability to control, limit, boost or switch electrical current or voltage from one circuit to another. This transistor can be used in various applications such as amplifiers, television tuners, dropper circuits, electronic oscillators, audio amplifiers, and switching circuits. It can be used as a voltage or current regulator, or as a power switch in low power applications.In a nutshell, the DTA044EEBTL is an ideal choice for those who are looking for a reliable, long-term performance switch or amplifier. It is specially designed to offer fast switching times, a wide operating temperature range and a wide range of operating voltages. Its features make it a versatile transistor that is suitable for a variety applications.The specific data is subject to PDF, and the above content is for reference
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