DTA013ZEBTL Discrete Semiconductor Products |
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Allicdata Part #: | DTA013ZEBTLTR-ND |
Manufacturer Part#: |
DTA013ZEBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 0.15W SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA013ZEBTL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | EMT3F (SOT-416FL) |
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The DTA013ZEBTL is a field effect transistor and falls into the category of "bipolar junction transistor (BJT) single, pre-biased." This type of transistor is one of the most popular for high current applications and can handle a wide range of output powers and supply voltages. There are several advantages that come with utilizing this type of transistor.
The primary benefit of the DTA013ZEBTL is that it is designed to be pre-biased. This feature allows it to be connected directly to a power source while still producing a configuration that requires no additional wiring. This is important for applications that require the ability to quickly switch between two configurations, such as in motor drives or other applications that require low voltage and high current. Additionally, the pre-biased configuration creates a thermal gradient that helps to spread the heat throughout the transistor and increase its efficiency.
The DTA013ZEBTL has a wide variety of applications, but its primary use is in high-performance power supplies. This type of transistor is capable of efficiently providing a sustained high current in a wide range of electrical environments. In power supply applications, the DTA013ZEBTL is often utilized as a main power switch. This is because of its low on-resistance, its excellent power handling, and its wide input operating range. Additionally, the DTA013ZEBTL has a good frequency response and can handle high switching speeds without compromising performance or reliability.
Another use for the DTA013ZEBTL is in audio amplifiers. The transistor\'s high frequency response and low on-resistance makes it ideal for this application, as it is able to accurately reproduce the audio signal without distortion. Additionally, the ability to switch between configurations quickly allows for greater control over the audio signal, which improves the sound quality. The DTA013ZEBTL is also ideal for use in power supplies for car audio systems, as its low on-resistance and ease of configuration provides superior performance and reliability compared to other transistors.
The working principle of the DTA013ZEBTL is relatively straightforward and is based on the behavior of a classic BJT. The transistor contains two distinct layers of semi-conductive material, an N-type layer and a P-type layer. When a voltage is applied across two of the terminals, an electric current is able to flow between the two layers. This current flows through the N-type layer, which acts as an emitter and produces a weak current called "collector current". This collector current is then multiplied by the gain of the transistor, producing an amplified output.
In summary, the DTA013ZEBTL is a field effect transistor which falls into the category of bipolar junction transistor (BJT) single, pre-biased. This type of transistor is great for high current applications and is capable of efficiently providing a sustained high current in a wide range of electrical environments. It is popular for use in power supplies and audio amplifiers, and its working principle is based on the behavior of a classic BJT.
The specific data is subject to PDF, and the above content is for reference
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