DTA014YMT2L Discrete Semiconductor Products |
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Allicdata Part #: | DTA014YMT2LTR-ND |
Manufacturer Part#: |
DTA014YMT2L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 50V VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA014YMT2L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 70mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VMT3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DTA014YMT2L is a pre-biased, single bipolar junction transistor (BJT). It is an NPN transistor with a maximum collector current of 200 milliamps, a minimum collector current of 100 milliamps, and a hFE of 300. The device also has a maximum collector-emitter saturation voltage of 1.5V, a minimum collector-emitter cutoff voltage of 1.0V, and a maximum collector-base breakdown voltage of 3.0V.
This device has a range of uses, mostly in low- and medium-power applications, such as audio amplifiers, radio receivers, power supply circuits, and other low-voltage and low-power circuits. It can also be used for RF and microwave applications, where its low noise characteristics make it well-suited for use in amplifiers and oscillators. The device can also be used in logic circuits and in TTL to ECL conversion applications.
The basic working principle of the DTA014YMT2L is that it acts as a switch, allowing current to flow through it when a small bias voltage is applied to the base. When this voltage is applied, the current between the collector and emitter increases – this is the collector-base current. With increasing base-emitter voltage, the current increases further. This is called the saturated collector-emitter current. The gain of the device is the ratio of the collector current to the base current, and is measured in hFE.
The DTA014YMT2L has a low on-resistance, making it suitable for use in low voltage applications, as well as in high speed logic circuits. Its low hFE, however, makes it better suited for applications where current gain is not a major concern, such as RF and microwave circuits. The device has a wide range of operating temperatures, making it suitable for use in many environments.
In summary, the DTA014YMT2L is a pre-biased, single bipolar junction transistor suitable for use in low-power, low-voltage applications, such as audio amplifiers, radio receivers, power supply circuits, and other low-power, low-voltage circuits. It can also be used in RF and microwave applications, where its low noise characteristics are ideal. The device is also suitable for use in logic circuits and in TTL to ECL conversion applications.
The specific data is subject to PDF, and the above content is for reference
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