DTA014EMT2L

Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 5mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	VMT3
Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--

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The DTA014EMT2L transistor is an NPN bipolar junction transistor (BJT) that is part of the pre-biased family. It is specifically designed for complementary circuits and functions as a switch or amplifier. The DTA014EMT2L is a two layer lateral structure transistor. It has two main insulation layers and a field oxide layer, which helps to reduce base-collector capacitance. The device has a maximum collector-emitter voltage rating of 40V and a maximum collector current of 500mA. The package size of this transistor is 7.5mmx4mm.The DTA014EMT2L is widely used in consumer electronics and audio applications due to its low noise performance. It is also widely used in power switching applications, such as DC-DC converters, and in high frequency amplifiers.This transistor can be used in circuits with pre-biased input stages, where the output is required to be the same level as the input. The pre-biased stage ensures that the output voltage is stabilized on either the positive or negative side of the supply voltage.In operation, the DTA014EMT2L transistor is biased in the active region, which occurs when the base current is equal to the base-emitter voltage. When a signal is applied to the base, the current flow in the base-collector junction is modulated, causing the collector current to swing and therefore the output signal to swing as well. This leads to an amplified signal at the output.This transistor also features a low gain level of only 6 to 8, which is ideal for low noise operation as less gain reduces unwanted signal noise. The maximum collector-emitter voltage rating of 40V also helps to reduce noise, as signals at higher voltages are more susceptible to interference. The DTA014EMT2L is suitable for use in high power circuits, as it has a good thermal resistance of 14°C/W. This helps to prevent the device from overheating and becoming damaged.Overall, the DTA014EMT2L is a versatile single NPN bipolar junction transistor that is ideal for pre-biased circuits that require low gain and low noise performance. Its thermal resistance ensures it can handle high power circuits, and its low base-collector capacitance reduces interference.

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