Allicdata Part #: | DTA114ESATP-ND |
Manufacturer Part#: |
DTA114ESATP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW SPT |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114ESATP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | DTA114 |
Supplier Device Package: | SPT |
Package / Case: | SC-72 Formed Leads |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 50mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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The DTA114ESATP is a silicon three-terminal pre-biased PNP transistor ideal for use as a general purpose power switch, or as an audio amplifier. This transistor has a great deal of applications and its working principle is fairly straightforward. It is a basic bipolar junction transistor (BJT) that allows current to flow between two terminals and provides enhanced current gain.
This particular DTA114ESATP transistor requires a fixed DC bias to the base terminal for the maximum current gain, allowing it to reach its full potential. The current gain is then controlled by the voltage difference between the base and emitter terminals, making this type of transistor suitable for small signal amplification. The base-emitter junction also allows the transistor to operate in saturation mode, which means that the base current is too low for the transistor to switch.
This transistor is typically used in audio applications and other high-power audio equipment. It is also used in circuits that require high resistivity or high impedance, such as linear voltage regulators. Additionally, since the DTA114ESATP is a pre-biased transistor, it is suitable for applications that require low-noise performance, such as ultra- low noise audio amplifiers.
The DTA114ESATP is also used as a medium-power switch in applications such as computer motherboards, as well as in robotics systems. Due to its low power consumption, the transistor is also suitable for low-power devices, making it an ideal choice for applications that require low-power switching.
In addition to its applications, understanding how the DTA114ESATP works helps an engineer to make better use of the transistor. It is an NPN transistor, which means that the N-type region is the “active” layer, while the P-type region is the “passive” layer. This distinction makes it easier to understand how the current flows through the transistor.
The base-emitter junction of the transistor is the main component responsible for producing current gain. When a voltage is applied to the base, it creates a small electric field, which then moves electrons from the emitter to the base. This creates a small current between the emitter and the base, which is then amplified by the current gain produced by the transistor.
The collector-emitter junction allows the voltage to be applied between the collector and the emitter, which controls the current flow through the transistor. When the voltage is increased between the collector and the emitter, more current flows through the transistor, allowing the transistor to reach its full current gain. When the voltage is decreased, the transistor operates in saturation mode.
Overall, the DTA114ESATP is a powerful PNP power transistor that has a wide range of applications. It is a pre-biased three-terminal transistor that provides enhanced current gain, and its operating principle is based on the diode junction of the collector and the emitter. Its robust design makes it suitable for high-power audio applications, as well as for low-power switches, and its low power consumption makes it ideal for robotics and low-power devices.
The specific data is subject to PDF, and the above content is for reference
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