Allicdata Part #: | DTA114GUAT106TR-ND |
Manufacturer Part#: |
DTA114GUAT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114GUAT106 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Base Part Number: | DTA114 |
Supplier Device Package: | UMT3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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The DTA114GUAT106 is a single pre-biased Bipolar Junction Transistor (BJT) used in a variety of applications. It is commonly used in power amplifiers, signal controllers, and switching circuits. The pre-biased design allows the device to be used as a stable and reliable switching device, making it suitable for both AC and DC switching applications.The DTA114GUAT106 has all the features of a standard BJT, but with two distinct advantages. The first is its integrated pre-bias, which allows the device to be used in a wide range of applications without the need for complex and time consuming external biasing. The second is its three-terminal setup, which makes it easy to implement in a range of different circuit configurations.The DTA114GUAT106 also has a wide variety of package options, including horizontal and vertical mount packages, and a range of operating temperature ranges. This makes the device suitable for use in a wide range of applications, from consumer electronics to industrial control systems.The mechanism of working of the DTA114GUAT106 is based on the principle of an active resistor. The transistor is designed with two PN junctions, one of which is a diode, and the other is a resistor. When a voltage is applied to the collector-emitter junction, it causes the current flowing from the Base to the collector to increase. This increase in current creates a voltage drop across the resistor, which in turn reduces the voltage at the collector. This reduction in voltage is known as the output voltage of the device.The DTA114GUAT106 is used in a wide range of applications from power switching, to precision analog control, to digital logic control. Its highly efficient operation and low cost make it a long-term reliable choice for applications that require chip-level precision and reliability.The DTA114GUAT106 is also typically used in applications that require high switching speeds and/or power levels. Its low collector-emitter capacitance and latch-up immunity make it ideal for applications that require fast switching and/or high power levels, such as RF communications and high-speed switching power supplies. It is also frequently used in communications applications due to its high output impedance and low noise.In summary, the DTA114GUAT106 is a single pre-biased Bipolar Junction Transistor (BJT) that is used in a wide range of applications from power switching, to precision analog control, to digital logic control. Its integrated pre-biased design, three-terminal configuration, wide package options and a range of operating temperature ranges make it suitable for a variety of applications. Its high performance and low cost make it a long-term reliable choice for applications that require chip-level precision and reliability.
The specific data is subject to PDF, and the above content is for reference
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