DTA114TCA-TP Allicdata Electronics
Allicdata Part #:

DTA114TCA-TP-ND

Manufacturer Part#:

DTA114TCA-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PREBIAS PNP 200MW SOT23
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114TCA-TP datasheetDTA114TCA-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03013
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: DTA114T
Description

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The DTA114TCA-TP is a type of single, pre-biased bipolar junction transistor (BJT). These devices are commonly used in various applications, including amplifiers, switching circuits, and radio frequency (RF) applications. The device employs a PN junction diode to regulate the current flow, and is designed to operate at frequencies between 10 MHz and 1 GHz. In addition, the device has a high collector current rating of up to 2A, making it suitable for applications which require a high current.

The DTA114TCA-TP is composed of an NPN transistor and an internal resistor network which is connected between the drain, gate and source of the transistor. This resistor network, known as an “emitter resistor”, and its connection to the drain and gate of the transistor, allow the device to be biased or controlled prior to the application of the signal.

The biasing process of the device involves controlling the voltage across the collector and emitter terminals. The internal resistor network allows the voltage to be adjusted, which in turn changes the current and thus the output power of the device. The output power is regulated by adjusting the collector to emitter voltage differential, or “bias voltage”. The purpose of this biasing process is to ensure that the transistor operates in the desired range and to optimise the output power, while at the same time limiting the power dissipation of the device.

The device can also be used in linear and switching applications. In linear applications, the current from the device is controlled by the bias voltage, and thus, the output power of the device can be adjusted by changing the bias voltage. In switching applications, the device is used as a gate for high-frequency signals, and the output power is determined by the voltage and current at the gate. The device is primarily used in audio and radio frequency circuits, such as amplifiers, modulators and demodulators, transmitters and receivers.

In addition to its power control features, the DTA114TCA-TP also offers several other advantages. These include low noise operation, small size and low cost. The device also has a wide operating temperature range, allowing it to be used in a variety of environments. The combination of these features makes the DTA114TCA-TP an ideal choice for a wide variety of applications.

The DTA114TCA-TP is a popular device among hobbyists, radio amateurs and commercial users alike. It is a versatile component, capable of providing reliable performance across a broad range of operating conditions. It is also simple to operate, allowing users to quickly and easily adjust the bias voltage as needed. All of these features make the DTA114TCA-TP one of the most popular pre-biased transistors on the market today.

The specific data is subject to PDF, and the above content is for reference

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