| Allicdata Part #: | DTA114TET1-ND |
| Manufacturer Part#: |
DTA114TET1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS PNP 200MW SC75 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | DTA114TET1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SC-75, SOT-416 |
| Base Part Number: | DTA114 |
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The DTA114TET1 is a single, pre-biased bipolar junction transistor (BJT) with a total power rating of 100 mW. It is a low-voltage device and operates at a range from +5V to +50V. This makes it suitable for applications that require a low-power and low-voltage BJT.
The DTA114TET1 is also a pre-biased transistor. This means that it requires no base current to operate and that it is able to operate even in low-voltage conditions. Its base-emitter transistor will start to conduct at a lower bias voltage compared to standard BJTs, vastly improving the transistor\'s efficiency. As a result, it is an excellent choice for low-power and low-voltage applications such as microwaves and low-power RF systems.
The DTA114TET1 has a collector-emitter voltage of 50V, a collector current of 30mA and a base current of 0.2mA. It also has a fast switching speed of up to 130ns. This makes it ideal for high-speed applications such as television production.
The transistor also features a high-current gain, which is also known as hFE. This means that it is able to amplify currents and signals, making it suitable for low-noise and high-frequency applications. Furthermore, its base-emitter voltage can be adjusted in order to reduce the circuit power consumption. This makes it very suitable for low-power and low-voltage applications such as cell phone circuits.
The DTA114TET1 is also used for audio amplifiers and high-frequency power amplifiers due to its excellent hFE and low base current. It is also used for highly efficient linear applications such as regenerative circuits. Furthermore, it can be used for switching applications in power supplies and voltage regulators.
In summary, the DTA114TET1 is a single, pre-biased BJT with excellent characteristics. Its low base current and fast switching speed make it an ideal choice for high-speed and low-power applications. Its high-current gain makes it suitable for high-frequency, low-noise linear applications such as regenerative circuits. Furthermore, it can be used for switching applications in power supplies and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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DTA114TET1 Datasheet/PDF