DTA114EMT2L

Resistor - Emitter Base (R2):	10 kOhms
Base Part Number:	DTA114
Supplier Device Package:	VMT3
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5mA, 5V
Series:	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	50mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The DTA114EMT2L is an ultra-low-power medium power NPN transistor from Diodes Incorporated. This part is a single, pre-biased, bipolar transistor integrated in a standard 2-lead TO-92 package. It’s specifically designed for use in applications where very low power consumption is required, such as consumer electronics and portables.

Application field

The DTA114EMT2L can be used in a variety of applications. In consumer electronics it finds use in audio amplifiers, IF amplifiers, signal limiting and clipping in receivers, and noise canceling in active noise control systems. It’s also well-suited for low-power transistor applications such as radio-controlled toys, wireless headsets, and portable devices.

Working principle

The DTA114EMT2L is a three-layer NPN power transistor, which operates in its active region most of the time. This means that current continues to flow between the collector and emitter even when the base current is zero. The magnitude of the collector-emitter current is controlled by the amount of base current. When the base current is increased, the collector-emitter current also increases, resulting in increased power dissipation.The base-emitter junction is biased with a small voltage of typically 0.6-0.7V. This creates a stable state in which the B-E junction is already conducting current even before any input signal has been applied. This bias helps reduce power consumption as the device is already in an active state when it is switched on.

Conclusion

The DTA114EMT2L is a low-power NPN transistor designed specifically for low-power device applications. It offers excellent electrical performance and reliability in a range of applications including audio amplifiers, IF amplifiers, signal limiting and clipping in receivers, and noise canceling in active noise control systems. It is also well-suited for transistor applications that require very low power consumption. Its three-layer structure and pre-biased base-emitter jet ion helps improve efficiency and further reduce power consumption.

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