DTA124EMT2L

The DTA124EMT2L is a three-terminal (Base, Emitter and Collector) single, pre-biased, NPN double diffused metal oxide silicon (DMOS) transistor. It is designed to operate with a specified pre-bias current of 2.5mA; that is, the bias current has to be supplied externally to ensure proper operation of the device.

Applications of the DTA124EMT2L transistor include motor control, automotive, audio amplifiers, and general purpose switching. It is suitable for low-power switching and interfacing applications in industrial, automotive, and communication systems. In audio amplifiers, the DTA124EMT2L transistor provides a high current gain (Ft) to form Class AB amplifiers or provide low distortion biasing for Class A amplifiers.

The working principle of the DTA124EMT2L transistor is based on the injection of electron-hole pairs into the base region by applying a positive voltage to the emitter which causes a corresponding current flow through the emitter-base junction. This current is sourced from the emitter and travels into the base region, which is opposite to the direction of the holes produced in the base region by the application of the base bias current. As the electron-hole pairs are injected into the base region, they are collected by the collector region and a current is produced. Thus, the collector current is controlled by the base current.

The DTA124EMT2L transistor utilizes the double diffusion process, where a single diffusion process is undertaken twice to achieve better control of the electrical parameters. This process results in improved temperature stability and higher breakdown voltage than ordinary BJTs, resulting in superior performance. It also features a low collector-emitter leakage current, which allows the device to be used in low-power applications.

In summary, the DTA124EMT2L is a pre-biased NPN bipolar transistor designed for use in low-power applications such as motor control, automotive, audio amplifiers, and general purpose switching. It utilizes the double diffusion process to improve electrical parameters, and features a low leakage current that allows the device to be used in low-power applications.