
Allicdata Part #: | DTA114TE-TPMSTR-ND |
Manufacturer Part#: |
DTA114TE-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | TRANS PREBIAS PNP 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.03013 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Base Part Number: | DTA114T |
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The DTA114TE-TP is a single pre-biased bipolar junction transistor (BJT) intended for linear and switching applications. It is noted for its low V CE(sat) , high gain, and ability to withstand significant currents. This transistor is well-suited for use in low-power applications such as signal buffering, amplifier circuits, and power-supply regulation.
The DTA114TE-TP features an epitaxial planar NPN structure, which provides for higher current gains, faster switching time, and lower V CE(sat) . The NPN configuration includes a base, an emitter and a collector junction, with current flowing from the emitter to the base and then to the collector. The transistor\'s base-emitter bias (V BE(on) ) is pre-determined and there is no need for manual adjustment.
The working principle of the DTA114TE-TP can be explained as follows: When a small current ( IB ) is applied to the emitter, current gain ( H FE ) increases rapidly and a large collector current ( IC ) flows. This increase in collector current allows the transistor to function as an amplifier, buffering the small input current to a much larger output current. If a large collector-base voltage (V CB ) is applied, the collector current ( IC ) will be reduced, turning the transistor off.
The DTA114TE-TP is a versatile transistor, with a wide range of uses. It can be used to amplify small signals, switch large currents, and regulate power supplies. It is also suited for applications such as LED drive and audio amplifiers, where low V CE(sat) is needed for linear operation.
In conclusion, the DTA114TE-TP is a single pre-biased bipolar junction transistor (BJT) that is designed for linear and switching applications. This type of transistor is noted for its low V CE(sat) , high gain, and ability to handle large currents. Its working principle is based on applying a small current (IB) to the emitter, which increases the current gain and allows a larger collector current to flow. This transistor has a wide range of uses, such as amplifying small signals, switching large currents, driving LEDs, and regulating power supplies.
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