DTA114TE-TP Allicdata Electronics
Allicdata Part #:

DTA114TE-TPMSTR-ND

Manufacturer Part#:

DTA114TE-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PREBIAS PNP 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114TE-TP datasheetDTA114TE-TP Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03013
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: DTA114T
Description

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The DTA114TE-TP is a single pre-biased bipolar junction transistor (BJT) intended for linear and switching applications. It is noted for its low V CE(sat) , high gain, and ability to withstand significant currents. This transistor is well-suited for use in low-power applications such as signal buffering, amplifier circuits, and power-supply regulation.

The DTA114TE-TP features an epitaxial planar NPN structure, which provides for higher current gains, faster switching time, and lower V CE(sat) . The NPN configuration includes a base, an emitter and a collector junction, with current flowing from the emitter to the base and then to the collector. The transistor\'s base-emitter bias (V BE(on) ) is pre-determined and there is no need for manual adjustment.

The working principle of the DTA114TE-TP can be explained as follows: When a small current ( IB ) is applied to the emitter, current gain ( H FE ) increases rapidly and a large collector current ( IC ) flows. This increase in collector current allows the transistor to function as an amplifier, buffering the small input current to a much larger output current. If a large collector-base voltage (V CB ) is applied, the collector current ( IC ) will be reduced, turning the transistor off.

The DTA114TE-TP is a versatile transistor, with a wide range of uses. It can be used to amplify small signals, switch large currents, and regulate power supplies. It is also suited for applications such as LED drive and audio amplifiers, where low V CE(sat) is needed for linear operation.

In conclusion, the DTA114TE-TP is a single pre-biased bipolar junction transistor (BJT) that is designed for linear and switching applications. This type of transistor is noted for its low V CE(sat) , high gain, and ability to handle large currents. Its working principle is based on applying a small current (IB) to the emitter, which increases the current gain and allows a larger collector current to flow. This transistor has a wide range of uses, such as amplifying small signals, switching large currents, driving LEDs, and regulating power supplies.

The specific data is subject to PDF, and the above content is for reference

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