Allicdata Part #: | DTA113ZSATP-ND |
Manufacturer Part#: |
DTA113ZSATP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW SPT |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA113ZSATP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 5mA, 5V |
Base Part Number: | DTA113 |
Supplier Device Package: | SPT |
Package / Case: | SC-72 Formed Leads |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DTA113ZSATP, otherwise known as Single, Pre-Biased transistors and a wide range of Electronic Components, are often used in various applications including power control and logic level switching. It is widely used for high-speed and low current applications due to its robust design, high-speed and low-power consumption. The DTA113ZSATP provides a high-frequency, high-speed and low-power solution to many of today\'s applications.
The Single, Pre-Biased transistors, which are made of semiconductor materials such as silicon, germanium and gallium arsenide, are usually employed as the active elements of a particular electronic device. This type of transistor is used in numerous applications such as power control, logic level switching and amplification. Its main feature is its immune with CRT fields and radiation of other electronic components. This makes it ideal for applications like power supply design, switching and frequency conversion.
The working principle of the DTA113ZSATP is based on the MOSFET technology, which has become an integral part of the modern electronics industry. The MOSFET is a three-terminal device. The gate of the MOSFET is a field-effect transistor that uses an electric field to control the conducting channel of the device. The source terminal will be provided with an input voltage, and the drain terminal will be used for a current output. The gate terminal will be connected to an amplifier in order to control the source and drain current.
For the DTA113ZSATP, the device has two terminals, the source and drain terminal. The source terminal is connected to a supply voltage, and the drain terminal is connected to the load or ground. When a voltage is applied across the MOSFET, a current will flow through it. The output of the device is determined by the voltage applied across the device. The device also acts like a valve and can control the current flow through it.
The DTA113ZSATP is ideal for applications that require low power consumption and high speed, as well as for protection of other components from high shock and vibration. It is also widely used for the control of motor speed and phase, as well as current sensing applications. It is also ideal for providing low cost logic-level switching and power control solutions.
Because of its low power consumption, it can be used in building high power transistors and power regulation designs. It also helps reduce power losses and improves the overall efficiency of the system. The DTA113ZSATP is also ideal for providing protection for low voltage and low noise applications.
In conclusion, the DTA113ZSATP is an ideal device for applications wherein power control and logic-level switching is required. Its low power consumption and high speed make it an ideal device for many of today\'s applications. Its high immunity to CRT fields and radiation of other electronic components are also beneficial and make the device incredibly efficient. The MOSFET technology also makes it possible to provide a low-cost, low-power and high-speed solution to many of today\'s applications.
The specific data is subject to PDF, and the above content is for reference
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