DTA123JET1G

The DTA123JET1G is a single, pre-biased, bipolar junction transistor (BJT). It is a high voltage, low drain-source on-state resistance field-effect transistor used for a variety of applications. Its features and specifications make it a perfect choice for a wide range of applications in power electronics, communications, and other sectors.

The DTA123JET1G is a double-diffused planar BJT with a double-sided visual gate. It consists of two layers of lightly-doped silicon and a single lightly-doped base region. The double-diffused design enables separate control and drain terminals, which allows efficient current flow. In addition, it also provides a low on-state resistance, enabling high power efficiency.

The device has an integrated electro-thermal protection, which improves the system reliability and prevents overloading of the device. It also has an integrated electrostatic discharge (ESD) protection. It features low gate threshold voltage and low total gate charge. The DTA123JET1G provides a unique combination of fast switching speed, low drain-source on-state resistance and superior thermal performance.

The DTA123JET1G is typically used in high-voltage switched-mode power supplies, industrial DC-to-DC converter designs, factory automation, robotics, and other high-power applications. It is also suitable for use as a series switch in power management applications requiring fast switching and low switching noise.

The working principle of the DTA123JET1G is quite simple. When a positive voltage is applied to the gate, the device is “on” and current flows from the source to the drain. When a negative voltage is applied, the device is “off”, and current does not flow from the source to the drain. In addition, the device can be used in a pre-biased configuration, in which it is powered up at the same time as the load current is applied.

In summary, the DTA123JET1G is a unique, single, pre-biased, high voltage, low drain-source on-state resistance field-effect transistor used for a variety of applications. Its features and specifications make it an ideal choice for a wide range of power electronics and communication applications. It provides a unique combination of fast switching speed, low drain-source on-state resistance, superior thermal performance and built-in electro-thermal & ESD protection.