Allicdata Part #: | DTA114TUBTL-ND |
Manufacturer Part#: |
DTA114TUBTL |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114TUBTL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02193 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | DTA114 |
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The DTA114TUBTL is a pre-biased single bipolar junction transistors (BJT). This device is fundamentally a three-terminal semiconductor device available in both NPN and PNP polarities. It consists of two PN junctions that are connected together for current amplification in the forward direction. In this way, it acts as a current controlled current amplifier, allowing a small base current to control a larger emitter-collector current.
In modern electronics, BJTs are used extensively throughout many applications. They can be used as amplifiers, switches, and to fabricate logic gates. When it comes to the DTA114TUBTL, it is mainly used as a Switching transistor in low power applications such as motor drivers, relays, and other switches. Additionally, its pre-bias feature increases the reliability and junction temperature stability, making it ideal for automotive applications.
The DTA114TUBTL has a wide range of operating temperature, from -65°C to 150°C, coupled with a low operating voltage of 55V, meaning it can be used in devices that require high levels of reliability and stability. Additionally, these transistors have low noise operation and low saturation voltage, making them suitable for a wide range of tasks.
Moving onto the DTA114TUBTL\'s working principle; this device utilizes the concept of a BJT. As its name implies, it consists of two PN junctions sharing a common pathway, the base, allowing for current amplification. The base-emitter junction is a diode which inputs the control signal, while the base-collector junction allows current to flow between the emitter and collector when the control signal is high.
The flow of current between the emitter and collector can be controlled using the base-emitter junction. When there is no current flowing, or when the voltage across the base-emitter junction is low, the transistor is said to be non-conducting. On the other hand, when the voltage across the base-emitter junction is high, the transistor is said to be conducting. This is because the current flowing from the base to the emitter increases exponentially.
The DTA114TUBTL utilizes this working principle to function as a switching transistor in low power applications. When the base voltage is low, it does not conduct any current. However, when the base voltage is high, current will flow from the emitter to the collector. This allows for precise control of the current flowing from the collector terminal to the load.
In conclusion, the DTA114TUBTL pre-biased single bipolar junction transistors (BJT) are a reliable and efficient device with many applications. Its ability to act as a current controlled current amplifier, and its wide temperature range, make it an ideal choice for automotive applications and other electronic circuits requiring precise and reliable switch control. Its two-junction construct, and the ability to precisely control the current flowing from the collector to the load make it a versatile and efficient device for many purposes.
The specific data is subject to PDF, and the above content is for reference
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