DTA114YCAHZGT116 Allicdata Electronics
Allicdata Part #:

DTA114YCAHZGT116TR-ND

Manufacturer Part#:

DTA114YCAHZGT116

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PNP -100MA -50V DIGITAL TRANSIST
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114YCAHZGT116 datasheetDTA114YCAHZGT116 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 350mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3
Description

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DTA114YCAHZGT116 is a single, pre-biased transistor. It has a Bipolar Junction Transistor structure, making it suitable for a wide range of applications in both digital and analog circuits. It has a PNP base-emitter structure and a current gain range of 700-2000. The maximum collector-emitter voltage is 5 V and the collector-emitter saturation voltage is 0.2 V. The maximum collector current is 600 mA and the maximum power dissipation is 3 W.

The DTA114YCAHZGT116 is built for use in high-frequency switching applications and is often chosen for its enhanced power capability. The collector-base and base-emitter junctions are pre-biased, allowing for constant bias conditions for improved reliability and reduced power dissipation. The pre-biased structure also minimizes inductive reactance and protects the transistor from over-currents.

When using the DTA114YCAHZGT116, it is important to consider the base-emitter voltage and the base-collector voltage when operating in different switch configurations. This is because these parameters can have a significant effect on the performance of the transistor, and the correct bias conditions must be established in order to ensure reliable operation.

When used as a switch, the principle of operation of this device can be described as follows. When the base voltage is greater than the emitter voltage, the base-emitter junction is forward biased and current flows between the emitter and the base. This, in turn, causes a small current to flow from the collector to the emitter. When the base voltage is lower than the emitter voltage, the base-emitter junction is reverse biased, preventing current from flowing from the base-emitter junction and effectively switching off the transistor. In other words, the device operates as a switch by controlling the amount of current that flows from the collector to the emitter.

This transistor can be used in a wide range of applications, including digital switching, analog signal amplification, power supply design, power amplifier design, and digital signal processors. In digital switching applications, the DTA114YCAHZGT116 can be used to control the flow of current between two points, such as a microprocessor and a display. The device can also be used to amplify or modify analog signals, such as voltage or current, and to ensure efficient power supply design and implementation. Additionally, this device can be used in power amplifiers to provide a stable and reliable output, and it can also be used in digital signal processors to filter out unwanted noise.

The DTA114YCAHZGT116 is a versatile and reliable device that can be used in many different applications. Its pre-biased structure ensures reliable operation and reduces power consumption, making it an ideal choice for a wide range of applications. In addition, its wide range of operating conditions and the low saturation voltage make it suitable for a variety of digital and analog circuits. As a result, this device can be used to create a wide range of reliable, efficient, and cost-effective solutions for various electronic and electrical applications.

The specific data is subject to PDF, and the above content is for reference

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