DTA123EET1G Allicdata Electronics
Allicdata Part #:

DTA123EET1G-ND

Manufacturer Part#:

DTA123EET1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA123EET1G datasheetDTA123EET1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416
Base Part Number: DTA123
Description

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A DTA123EET1G transistor is a single, pre-biased bipolar junction transistor usually used for power applications. Bipolar transistors are three-terminal active components that can open or close a circuit path, or amplify signals. The DTA123EET1G, in particular, is designed for high-speed switching and high-voltage applications.

Bipolar transistors have the ability to amplify signals. This amplification is achieved through the interaction of the current control element, called the base, and the two current carrying elements called the emitter and collector. The base is the control terminal and is used to control the current flow between the emitter and collector.

The DTA123EET1G transistor is pre-biased, meaning it is fixed into an operating range determined by the manufacturer. When the transistor is active, a voltage drop across the collector-emitter results in current flow from the collector through the base and out the emitter. The current at the base is mainly responsible for the current at the collector-emitter, thus amplifying the signal.

The DTA123EET1G is particularly well-suited for high-power applications because it has the capacity to handle large currents and voltages. Additionally, it has the ability to switch fast, making it ideal for high-speed pulse applications. It is also robust enough to withstand transients and fast transitions, which makes it suitable for both steady-state and pulsed circuits.

The DTA123EET1G transistor is commonly used in high-voltage applications such as in power supplies, motor control, switching regulators, LED drivers, and audio amplifiers. It can also be used in low-voltage applications such as in data converters and communication circuits.

The DTA123EET1G is a versatile device that allows engineers to control a wide range of power applications with precision and accuracy. Its pre-biased design allows for high-speed switching, high-voltage applications, and improved reliability. It is also robust and can withstand transients and fast transitions, making it suitable for both steady-state and pulsed circuits. Whether you\'re designing a power supply, LED driver, or audio amplifier, the DTA123EET1G is an excellent choice.

The specific data is subject to PDF, and the above content is for reference

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