Allicdata Part #: | DTA123JET1-ND |
Manufacturer Part#: |
DTA123JET1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SC75 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA123JET1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Base Part Number: | DTA123 |
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The DTA123JET1 is classified as a single, pre-biased bipolar junction transistor (BJT). It is officially manufactured by NXP Semiconductors, a Dutch headquartered semiconductor manufacturer founded in the early 1960s. This transistor is available in a SOT23 single-in-line package, and its nominal current gain is between 30 and 100. It is a three-terminal device composed of two NPN BJTs and a resistor connected to ground between the two emitting terminals.
The DTA123JET1 is used to drive MOSFETs, and it serves as a pre-biased current buffer due to its large current gain. The pre-biasing is done through the built-in resistor, which also plays the role of providing some resistance to the signal. This transistor is ideal for applications which involve driving high-side MOSFETs, as its wide base-emitter voltage range (1.2V to 3V) enables it to handle high gate capacitance. The device also offers protection against Electrostatic Discharge (ESD) due to its on-chip substrate diodes.
The working principle of the DTA123JET1 is based on BJT action. Basically, it acts as a current amplifier, taking a relatively small current at its base and amplifying it to a much larger current between the collector and emitter. The current flow between the collector and the emitters forms a pair of bipolar diodes. The small voltage drop across the resistor connected to the two emitting terminals provides the pre-biasing needed for the MOSFET to turn on faster.
The DTA123JET1 is mostly used for driving high-side MOSFETs in motor control, power regulation, and display output circuits. It is also used for low-power AC/DC power conversion and smart power systems. The device is also well suited for gate drive applications as its small package size allows for compatibility with multiple high-side gate drivers in the same circuit.
In conclusion, the DTA123JET1 is a pre-biased single bipolar junction transistor, designed to drive high-side MOSFETs. It is equipped with an integrated on-chip substrate diode to provide protection against Electrostatic Discharge (ESD). It is well suited for small-signal and gate drive applications, as well as motor control, power regulation, and display output systems.
The specific data is subject to PDF, and the above content is for reference
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