Allicdata Part #: | DTA124ESATP-ND |
Manufacturer Part#: |
DTA124ESATP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 300MW SPT |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA124ESATP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | DTA124 |
Supplier Device Package: | SPT |
Package / Case: | SC-72 Formed Leads |
Mounting Type: | Through Hole |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 30mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Box (TB) |
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The DTA124EsatP is a single, pre-biased bipolar junction transistor (BJT) commonly used in a wide range of electronic application fields, from basic discrete switching and amplifying to more complex and high-frequency applications. DTA124EsatP transistors are manufactured from Monolithic Bipolar Technology, with a pre-biased thermal diffusion and a VCEs(sat) specification designed to reduce the need for the external base resistor and biasing networks. They come with Lead-free terminals and electro-static discharge (ESD) protection.
The DTA124EsatP, which belongs to the single, pre-biased BJT family, has the advantages of performing robust switching and amplification functions in both high- and low-power applications. It is a low-threshold device, meaning that only a minimal amount of base current (or even none) is required to trigger the conduction. This helps reduce the external biasing requirements, resulting in a simpler circuit design.
The device consists of a base, an emitter, and a collector: the base serves as the control terminal, while the emitter and collector are used to transport the flow of current between them and the external circuit. When a forward voltage is applied, the electrons in the base-emitter junction are injected into the base region, creating a forward current. As the base current increases, it repels the electrons from the base, reducing the number of carriers, and allowing the collector current (IC) to flow from the collector to the emitter.
In addition to its simple design, the DTA124EsatP is designed to be tolerant to noise signals and has the capability to handle high switching speeds, making it suitable for many high power and speed applications such as RF and microwave oscillators, switching amplifiers, and high-power switching. The DTA124EsatP can also be used in various motor applications, as motor drives, DC motor speed control, and current-limitation devices, to name a few.
In summary, the DTA124EsatP is a single, pre-biased, bipolar junction transistor. It is an ideal device for applications that require high switching speeds, low threshold current, and minimal external biasing components. It can be found in a variety of devices, including motor drives, RF and microwave oscillators, switching amplifiers, and more.
The specific data is subject to PDF, and the above content is for reference
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